SiC MOSFET LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L LSIC1MO120E0080 1200 V N-channel, Enhancement-mode SiC MOSFET RoHS Product Summary Characteristics VDS Circuit Diagram TO-247-3L Value Unit 1200 V Typical RDS(ON) 80 m ID ( TC 100 C) 25 A Features * O ptimized for highfrequency, high-efficiency applications * N ormally-off operation at all temperatures * U ltra-low on-resistance * E xtremely low gate charge and output capacitance * * Body diode 1 2 * L ow gate resistance for high-frequency switching 3 Environmental * L ittelfuse "RoHS" logo = RoHS conform Applications RoHS * L ittelfuse "HF" logo = Halogen Free * Littelfuse "Pb-free" logo = Pb Pb-free lead plating * H igh-frequency applications * S olar Inverters * S witch Mode Power Supplies * M otor Drives * H igh Voltage DC/DC Converters * B attery Chargers * Induction Heating * U PS (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.2, Revised: 10/12/18 Pb SiC MOSFET LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L Maximum Ratings Characteristics Symbol Continuous Drain Current Conditions Value VGS = 20 V, TC = 25 C 39 VGS = 20 V, TC = 100 C 25 ID(pulse) TC = 25 C 80 PD TC = 25 C, TJ = 150 C ID Pulsed Drain Current 1 Power Dissipation Operating Junction Temperature TJ Unit A A 179 W -55 to 150 C VGS,MAX Absolute maximum values -6 to 22 VGS,OP,TR Transient, <1% duty cycle -10 to 25 VGS,OP Recommended DC operating values -5 to 20 Storage Temperature TSTG - -55 to 150 C Lead Temperature for Soldering Tsold - 260 C Mounting Torque MD M3 or 6-32 screw Gate-source Voltage V 0.6 Nm 5.3 in-lb Footnote 1: Pulse width limited by TJ,max Thermal Characteristics Characteristics Symbol Value Unit Maximum Thermal Resistance, junction-to-case Rth,JC,max 0.7 C/W Maximum Thermal Resistance, junction-to-ambient Rth,JA,max 40 C/W Electrical Characteristics (TJ = 25 C unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 1200 - - V Zero Gate Voltage Drain Current IDSS Static Characteristics Gate Leakage Current - 1 100 - 2 - IGSS,F VGS = 20 V, VDS = 0 V - - 100 IGSS,R VGS = -10 V, VDS = 0 V - - 100 ID = 20 A, VGS = 20 V - 80 100 ID = 20 A, VGS = 20 V, TJ = 150 C - 105 - VDS = VGS, ID = 10 mA 1.8 2.8 4.0 VDS = VGS, ID = 10 mA, TJ = 150 C - 1.9 - f = 1 MHz, VAC = 25 mV - 1.0 - Drain-source On-state Resistance RDS(ON) Gate Threshold Voltage VGS,(th) Gate Resistance VDS = 1200 V, VGS = 0 V VDS = 1200 V, VGS = 0 V, TJ = 150 C RG A nA m V (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.2, Revised: 10/12/18 SiC MOSFET LSIC1MO120E0080, 1200 V, 80 m Ohm, TO-247-3L Electrical Characteristics (TJ = 25 C unless otherwise specified) Characteristics Symbol Conditions Value Min Typ Max - 270 - - 60 - - 330 - - 1825 - - 75 - Unit Dynamic Characteristics Turn-on Switching Energy EON Turn-off Switching Energy EOFF Total Per-cycle Switching Energy ETS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS COSS Stored Energy EOSS Total Gate Charge Qg Gate-source Charge Qgs Gate-drain Charge Qgd Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time Fall Time td(off) tf VDD = 800 V, ID = 20 A, VGS = -5/+20 V, RG,ext = 2 , L = 1.4 mH VDD = 800 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV VDD = 800 V, ID = 20 A, VGS = -5/+20 V VDD = 800 V, VGS = -5/+20 V, ID = 20 A, RG,ext = 2 , RL = 40 , Timing relative to VDS - 15 - - 25 - - 95 - - 29 - - 39 - - 10 - - 10 - - 16 - - 6 - J pF J nC ns Reverse Diode Characteristics Characteristics Diode Forward Voltage Symbol VSD Continuous Diode Forward Current IS Peak Diode Forward Current 1 ISP Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Footnote 1: Pulse width limited by TJ,max (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/12/18 Irrm Conditions Value Min Typ Max IS = 10 A, VGS = 0 V - 3.8 - IS = 10 A, VGS = 0 V, TJ = 150 C - 3.4 - VGS = 0 V, TC = 25 C VGS = -5 V, IS = 20 A, VR = 800 V, dI/dt = 5.3 A/ns Unit V - - 35 - - 85 - 25 - ns - 185 - nC - 16 - A A SiC MOSFET LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L Figure 2: Transfer Characteristics ( VDS = 10 V ) 200 90 180 80 160 Drain Current, ID (A) Maximum Power Dissipation (W) Figure 1: Maximum Power Dissipation ( TJ = 150 C ) 140 120 100 80 60 40 20 0 -75 -25 25 75 125 70 60 50 40 -55 C 20 10 0 175 150 C 25 C 30 Case Temperature, TC (C) 0 5 10 15 20 Gate -Source Voltage, VGS (V) Figure 3: Output Characteristics ( TJ = 25 C ) Figure 4: O utput Characteristics ( TJ = 150 C ) 80 80 18V 60 Drain Current, ID (A) Drain Current, ID (A) 20V 16V 40 14V 20 12V 60 VGS = 20V,18V,16V 14V 40 12V 10V 20 10V 0 0 2 4 6 8 0 10 Drain-source Voltage, V DS (V) 0 Figure 5: Output Characteristics ( TJ = -55 C ) 4 6 8 10 Figure 6: Reverse Conduction Characteristics ( TJ = 25 C ) 80 Reverse Voltage, VSD (V) 7 6 5 4 3 2 1 20V 60 0 0 10 18V 20 40 -5V 16V 0V 5V 10V VGS = 15V, 20V 30 40 20 14V 50 12V 60 10V 0 0 2 4 6 8 Drain -source Voltage, VDS (V) 10 70 Reverse Current, IS (A) Drain Current, ID (A) 2 Drain -source Voltage, VDS (V) 80 (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.2, Revised: 10/12/18 SiC MOSFET LSIC1MO120E0080, 1200 V, 80 m Ohm, TO-247-3L Figure 7: Reverse Conduction Characteristics ( TJ = 150 C ) 7 Reverse Voltage, VSD (V) 6 5 4 3 2 Reverse Voltage, VSD (V) 1 0 7 5 4 3 2 5V 10V 1 0 30 40 50 60 70 -5V 0V 10 VGS = 15V,20V 20 30 40 50 60 70 80 80 Figure 10: S afe Operating Area ( TC = 25 C ) 10 0 100 Drain Current, ID (A) 0.5 (Normalized to Rth,JC) Transient Thermal Impedance, Zth,JC Figure 9: Transient Thermal Impedance 0.3 10 -1 0.1 0.05 0.02 10 -2 0.01 Single Pulse 10 -3 10 -6 100 s 1 1 ms 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 10 s 10 10 0 DC 0.1 Pulse Width (s) On-resistance, R DS(ON) (m) 200 180 160 150 C 140 120 -55 C 100 25 C 80 60 40 20 15 25 35 45 Drain Current, ID (A) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/12/18 10 1000 Drain- source Voltage, VDS (V) Figure 12: Normalized On-resistance 55 65 Normalized On-Resistance, RDS(ON) Figure 11: On-resistance vs. Drain Current 0 0 Reverse Current, IS (A) 20 VGS = 10V,15V,20V 5V Reverse Current, IS (A) 0V 6 0 10 -5V Figure 8: Reverse Conduction Characteristics ( TJ = -55 C ) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 ( VGS = 20 V, I D = 20 A ) -75 -50 -25 0 25 50 75 100125150175 Junction Temperature, TJ (C) SiC MOSFET LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L Figure 13: Threshold Voltage Threshold Voltage, VGS(th) (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 (I D = 10 mA) -75 -50 -25 0 25 50 75 100125150175 Normalized Blocking Voltage, V(BR)DSS (V) Figure 14: Drain-source Blocking Voltage 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 (I D = 250 A) -75 -50 -25 0 Junction Temperature, TJ (C) Junction Temperature, TJ (C) Figure 15: Junction Capacitances Figure 16: Junction Capacitances 10000 C ISS Capacitance (pF) Capacitance (pF) 10000 1000 100 10 C OSS ( f = 1 MHz ) 0 200 600 800 COSS 100 C RSS 400 CISS 1000 10 0 1000 RSS 50 100 150 200 Drain Voltage, V DS (V) Figure 17: COSS Stored Energy EOSS Figure 18: Gate Charge 40 20 Gate - source Voltage, VGS (V) Stored Energy, Eoss (J) C ( f = 1 MHz ) Drain Voltage, VDS (V) 30 20 10 0 25 50 75 100 125 150 175 15 10 5 0 -5 0 200 400 600 800 Drain Voltage, VDS (V) 1000 ( VDD = 800 V, I D = 20 A ) 0 10 20 30 40 50 60 70 80 90 100 Gate Charge, Q g (nC) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.2, Revised: 10/12/18 SiC MOSFET LSIC1MO120E0080, 1200 V, 80 m Ohm, TO-247-3L Figure 19: Switching Energy vs. Drain Current Figure 20: Switching Energy vs. Gate Resistance 700 1200 EON 800 600 400 200 EOFF 500 0 10 20 30 40 50 EON 400 300 200 100 EOFF 0 0 ETS VDD = 800 V I D = 20A VGS = -5/+20V FWD = LSIC2SD120A10 L = 1.4 mH TJ = 25 C 600 Switching Energy ( J) 1000 Switching Energy (J) ETS VDD = 800 V RG,ext = 2 VGS = -5/+20V FWD = LSIC2SD120A10 L = 1.4 mH TJ = 25 C 0 Drain Current, I D (A) 2 4 6 8 10 12 External Gate Resistance, R G,ext () Package Dimensions TO-247-3L Symbol 1 A Millimeters Min Nom A 4.902 5.029 5.156 A1 2.253 2.380 2.507 A2 1.854 1.981 2.108 D 20.828 20.955 21.082 E 15.773 15.900 16.027 E2 4.191 4.318 4.445 E2/2 1.473 1.524 1.575 L 20.066 20.193 20.320 L1 3.937 4.191 4.445 oP 3.556 3.067 3.658 Q 5.486 5.613 5.740 S 6.045 6.172 6.299 e Recommended Hole Pattern Layout 2.46 5.44 UNIT: mm 0.991 - 1.397 0.991 1.199 1.346 b2 1.651 - 2.387 b3 1.651 1.999 2.336 b4 2.591 - 3.429 b5 2.591 3.000 3.378 0.381 0.635 0.889 0.381 0.610 0.838 side measured at outer most extreme of D1 17.399 17.526 17.653 plastic body. D2 1.067 1.194 1.321 E1 13.894 14.021 14.148 oP1 7.061 7.188 7.315 3.oP to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of 3.912 mm. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/12/18 b b1 c 2. Dimension D, E do not include mold flash. Mold flash shall not exceed 0.127 mm per 5.44 5.436 c1 1. Dimensions are in millimeters 3 .9 R0 Notes: Max SiC MOSFET LSIC1MO120E0080, 1200 V, 80 mOhm, TO-247-3L Part Numbering and Marking System SIC1MO120E0080 LF YYWWE ZZZZZZ-ZZ Packing Options SIC = SiC = Gen1 1 MO = MOSFET = Voltage Rating (1200 V) 120 E = TO-247-3L 0080 = RDS(ON) (80 mOhm) = Year YY WW = Week = Special Code E ZZZZZZ-ZZ = Lot Number Part Number Marking Packing Mode M.O.Q LSIC1MO120E0080 SIC1MO120E0080 Tube(30pcs) 450 a a f ; f ; O a ; O a ; Of ; O f ; f f 1. All pin plug holes are considered critical dimension 2. Tolerance is to be 0.010 unless otherwise specified 3. Dimension are in inch (and millimeters). f f NOTE: f f f f f f f f Packing Specification TO-247-3L f f Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Rev 0.2, Revised: 10/12/18