V
RRM
= 50 V - 1000 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Types up to 1000 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
V
1N3671A thru 1N3673AR
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
y
Diode
Conditions 1N3671A (R)
800 1000
1N3673A (R)
pp g
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
V
R
= 50 V, T
j
= 175 °C
V
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-65 to 200
Reverse current I
R
V
F
A
560
800
12
240
700
1000
12
240
-65 to 200
1N3671A (R) 1N3673A (R)
1.1 1.1
-65 to 200
-65 to 200
10
15
10
15
2.00 2.00
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1N3671A thru 1N3673AR
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