IGBT MODULE
Spec.No.IGBT-SP-06020R1 P1
MBN1800E17E
Silicon N-channel IGBT
1. FEATURES
∗ Low noise, low loss IGBT module due to soft-LiPT Trench Technology
∗ Low noise due to ultra soft fast recovery diode. (U-SFD)
∗ High reverse recovery capability (HiRC)
∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)
2. ABSOLUTE MAXIMUM RATINGS (Tc=25
o
C )
Item Symbol Unit MBN1800E17E
Collector Emitter Voltage V
CES
V 1,700
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,800
Collector Current 1ms I
Cp
A 3,600
DC I
F
1,800
Forward Current 1ms I
FM
A 3,600
Total Power dissipation Ptot kW 8.3
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature Tstg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
4,000 (AC 1 minute)
(M4) - 2
(1)
Terminals
(M8) - 15
(1)
Screw Torque
Mounting
(M6) -
N·m
5
(2)
Notes: (1) Recommended Value 2.0
+0.1
-0.2
/ 15
+0
-3
N·m
(2) Recommended Value 5.0±1N·m
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P2
MBN1800E17E
3. ELECTRIC CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 10 V
CE
=1,700V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 15
50 V
CE
=1,700V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
- 2.0
- I
C
=1,800A, V
GE
=15V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE
(sat)
V 1.7
2.2
2.8 I
C
=1,800A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE
(TO)
V 5.0
6.5
8.0 V
CE
=10V, I
C
=180mA, Tj=25
o
C
Input Capacitance C
ies
nF - 150
-
Reverse transfer Capacitance C
res
nF - 9 -
Output Capacitance C
oes
nF - 17
-
V
CE
=10V, V
GE
=0V
f=100kHz, Tj=25
o
C
Total Gate Charge Q
G
µC - 11
- V
GE
=±15V, Vcc=900V, Ic=1,800A
- 5.0
- V
GE
=-15V
→
0V, Vcc=900V, Ic=1,800A
Turn-on Gate Charge QG(on)
µC - 6.5
- V
GE
=-15V
→
8V, Vcc=900V, Ic=1,800A
Internal Gate Resistance
(Tentative)
R
ge(int)
Ω
0.9
1.4
2.1 V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Turn on delay Time
t
d(on)
0.5
1.1
2.2
Rise Time t
r
0.5
1.1
2.2
Turn On Time t
on
1.0
2.2
4.4
Turn off delay Time
t
d(off)
0.6
1.3
2.6
Fall Time t
f
0.3
0.9
1.8
Switching Times
Turn Off Time t
off
µs
1.0
2.2
4.4
V
CC
=900V, Ic=1,800A
L=100nH
R
G
(on/off)=6.8/2.7Ω
(3)
V
GE
=±15V, Tj=125
o
C
- 1.8
- IF=1,800A, V
GE
=0V, Tj=25
o
C
Peak Forward Voltage Drop V
FM
V 1.4
1.9
2.5 IF=1,800A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs 0.2
0.7
1.4
E
on(10%)
J/P - 0.45
0.68
Turn On Loss E
on(Full)
J/P - 0.6
(0.9)
E
off(10%)
J/P - 1.0
1.5
Turn Off Loss E
off(Full)
J/P - 1.1
(1.65)
E
rr(10%)
J/P - 0.6
0.9
Reverse Recovery Loss E
rr(Full)
J/P - 0.75
(1.15)
Reverse Recovery Peak Current I
RRM
A - 1500
-
V
CC
=900V, Ic=1,800A
L=100nH
R
G
(on/off)=6.8/2.7Ω
(3)
V
GE
=±15V, Tj=125
o
C
RBSOA Ic A 3600
- -
Recovery SOA I
F
A 3600
- -
V
CC
=1100V,L=100nH,R
G
(on/off)=6.8/2.7Ω
(3)
V
GE
=±15V, Tj=125
o
C
I
2
t value I
2
t kA
2
s
- 1000
- T
j,start
=125
o
C, 10ms, V
R
=0V
Partial Discharge Extinction Voltage V
PDoff
V
RMS
1.3
- - Q=10pC, 50Hz,
Notes :
(3) R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms (overshoot voltage, etc.) with
appliance mounted.
4. THERMAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
IGBT Rth(j-c)
- - 0.012
Thermal Resistance FWD Rth(j-c)
K/W
- - 0.015
Junction to case
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.006
-
Case to fin. Thermal grease applied.
Thickness 100µm,
Thermal conductivity of grease: 1W/mK
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P3
MBN1800E17E
5. MODULE MECHNICAL CHARACTERISTICS
Item Unit
Characteristics Conditions
Weight g 1300
Between terminal
mm
49
Creeping Distance Terminal-Base mm
33
Between terminal
mm
22
Clearance Distance Terminal-Base mm
25
L S ( C M - E M ) 12 Collector-main to Emitter-main
L S ( E S - E M ) 3.8 Emitter-sense to Emitter-main
Stray inductance in module
L S ( C M - C S )
nH
6.4 Collector-main to Collector sense
Terminal Resistance R
Terminal
mΩ 0.09 Collector-main to Emitter-main
Comparative Tracking Index (CTI) 600
Module base plate Material Al-SiC
Baseplate Thickness mm
5
Insulation Material Al N
Terminal Surface treatment Ni plating
Case Material
Poly-Phenilene Sulfide
Fire and Smoke Category I2 / F3 NFF 16-102
6. CIRCUIT DIAGRAM
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P4
MBN1800E17E
7. CHARACTERISTICS CURVE
7.1 STATIC
CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
1800
2000
012345
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
Tc=25
℃
℃℃
℃
VGE=15V 13V
11V
7V
9V
TYPICAL
Collector Current vs. Collector to Emitter Voltage
0
200
400
600
800
1000
1200
1400
1600
1800
2000
012345
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
VGE=15V 13V
11V
7V
Tc=125
℃
℃℃
℃
9V
TYPICAL
Collector Current vs. Collector to Emitter Voltage
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage VF (V)
Forward Current IF (A)
Tc=25
℃
℃℃
℃
Tc=125
℃
℃℃
℃
TYPICAL
Forward Voltage of free-wheeling diode
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P5
MBN1800E17E
1
10
100
1000
0.1 1 10 100
VCE (V)
Cies, Coes, Cres (nF)
f=100kHz,Tc=25
℃
TYPICAL
Cies
Coes
Cres
Cies, Coes, Cres vs. Vce
-15
-10
-5
0
5
10
15
20
-10 -5 0 5 10
QG (uC)
VGE (V)
TYPICAL
QG-VGE curve
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P6
MBN1800E17E
7.2 DYNAMIC
CHARACTERISTICS
7.2.1 CIRCUIT
Vcc
Ls=100nH
L
LOAD
Rg(on/off)=6.8/2.7Ω
Definition of Ls
Ic
t
0
VL
tL
Vce
t=t
L
Ls=
V
L
dIc
d
ｔ
(
)
7.2.2 WAVEFORM DEFINITION
Definition of switching loss
t4
t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
t5
90%
90%
Vge
Vce
Ic
10%
10%
toff
tf
t8
t7
t0
t0
t6
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Eon(10%)=
∫
Ic
･
Vce dt
t4
t3
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t6
t5
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P7
MBN1800E17E
7.2.3 DEPENDENCE OF CURRENT
0
0.5
1
0 500 1000 1500 2000
Collector Current Ic (A)
Turn-on Loss Eon (J/pulse)
Eon(Full)
Eon(10%)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=100nH
L=100nH L=100nH
L=100nH
RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
TYPICAL
Turn-on Loss vs. Collector Current
0
0.5
1
0 500 1000 1500 2000
Forward Current IF (A)
Reverse Recovery Loss Err (J/pulse)
Err(Full)
Err(10%)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=100nH
L=100nH L=100nH
L=100nH
RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
TYPICAL
Reverse Recovery Loss vs. Forward Current
0
0.5
1
1.5
0 500 1000 1500 2000
Collector Current Ic (A)
Turn-off Loss Eoff (J/pulse)
Eoff(Full)
Eoff(10%)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=100nH
L=100nH L=100nH
L=100nH
RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
TYPICAL
Turn-off Loss vs. Collector Current
0
0.5
1
1.5
2
2.5
3
0 500 1000 1500 2000
Collector Current Ic (A)
Switching Time Ton,tr,Toff,tf,Trr (µs)
Toff
Ton
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=100nH
L=100nH L=100nH
L=100nH
RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω RG(on/off)=6.8/2.7Ω
RG(on/off)=6.8/2.7Ω
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
TYPICAL
tr
tf
Trr
Switching Time vs. Collector Current
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P8
MBN1800E17E
7.2.4 DEPENDENCE OF RG
0
0.5
1
1.5
0 2 4 6 8 10 12 14
Gate Resistance Rg (Ω)
Reverse Recovery Loss Err (J/pulse)
Err(Full)
Err(10%)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
IF=1800A
IF=1800A IF=1800A
IF=1800A
L=100nH
L=100nH L=100nH
L=100nH
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
TYPICAL
Reverse Recovery Loss vs. Gate Resistance
0
0.5
1
1.5
0 2 4 6 8 10 12 14
Gate Resistance Rg (
Ω
ΩΩ
Ω
)
Turn-on Loss Eon (J/pulse)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
Ic=1800A
Ic=1800A Ic=1800A
Ic=1800A
L=100nH
L=100nH L=100nH
L=100nH
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
TYPICAL
Turn-on Loss vs. Gate Resistance
Eon(Full)
Eon(10%)
0
0.5
1
1.5
2
0246810
Gate Resistance Rg (Ω)
Turn-off Loss Eoff (J/pulse)
Eoff(Full)
Eoff(10%)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
Ic=1800A
Ic=1800A Ic=1800A
Ic=1800A
L=100nH
L=100nH L=100nH
L=100nH
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
TYPICAL
Turn-off Loss vs. Gate Resistance
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P9
MBN1800E17E
8. PACKAGE OUTLINE DRAWING
Ｌ
ＬＬ
Ｌ
ａ
ａａ
ａ
ｂ
ｂｂ
ｂ
ｅ
ｅｅ
ｅ
ｌ
ｌｌ
ｌ
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IGBT MODULE
Spec.No.IGBT-SP-06020R1 P10
MBN1800E17E
9. Thermal Impedance
9.1 TRANSIENT THERMAL IMPEDANCE
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time t(s)
IGBT
Diode
Transient thermal impedance Zth(j-c)(K/W)
Transient Thermal Impedance Curve
(Maximum Value)
10. Negative environmental impact material
Please note the following materials are contained in the product in order to keep
characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
Arsenic and its compounds Si chip
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1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual
brochure before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets.
Hitachi assumes no responsibility for any intellectual property claims or any other
problems that may result from applications of information, products or circuits described
in this data sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum
rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures
are to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
HITACHI POWER SEMICONDUCTORS
Notices
Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/
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