< IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .......................................... 7 9 0 A* Collector-emitter voltage V CES ......................... 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 C Flat base Type Copper base plate RoHS Directive compliance UL Recognized under UL1557, File E323585 Dual switch (Half-Bridge) *. DC current rating is limited by power terminals. APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION Tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 Di1 C2E1 Tr2 E2 Di2 Publication Date : September 2013 1 Tr1 C1 G1 E1 (Es1) Division of Dimension E2 G2 (Es2) Tolerance otherwise specified < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (T j =25 C, unless otherwise specified) Rating Unit V CES Symbol Collector-emitter voltage Item G-E short-circuited Conditions 1200 V V GES Gate-emitter voltage C-E short-circuited 20 V DC, T C =117 C IC (Note2, 4) (Note2) Collector current I CRM Total power dissipation IE (Note1) I ERM (Note1) T C =25 C DC 1600 (Note2, 4) 5355 (Note2) W 790 * (Note2) Emitter current A 800 (Note3) Pulse, Repetitive P tot 790 * A 800 Pulse, Repetitive (Note3) 1600 V isol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 T jmax Maximum junction temperature Instantaneous event (overload) 175 V T cmax Maximum case temperature (Note4) 125 T jop Operating junction temperature Continuous operation (under switching) -40 ~ +150 T stg Storage temperature - -40 ~ +125 C C ELECTRICAL CHARACTERISTICS (T j =25 C, unless otherwise specified) Symbol Item I CES Collector-emitter cut-off current I GES Gate-emitter leakage current V GE =V GES , C-E short-circuited V GE(th) Gate-emitter threshold voltage I C =80 mA, V CE =10 V V GE =15 V, (Terminal) Collector-emitter saturation voltage V CEsat (Chip) C ies Input capacitance C oes Output capacitance C res Reverse transfer capacitance QG Gate charge t d(on) Turn-on delay time tr Rise time t d(off) Turn-off delay time tf Fall time V EC Refer to fig. of test circuit (Note5) Emitter-collector voltage (Note1) (Chip) Typ. Max. - - 1.0 mA - - 0.5 A 5.4 6.0 6.6 V T j =25 C - 1.95 2.40 T j =125 C - 2.25 - T j =150 C - 2.35 - T j =25 C - 1.70 2.15 V GE =15 V, T j =125 C - 1.90 - (Note5) T j =150 C - 1.95 - - - 80 V CE =10 V, G-E short-circuited - - 16 - - 1.32 V CC =600 V, I C =800 A, V GE =15 V - 1868 - - - 800 - - 200 - - 600 - - 300 V CC =600 V, I C =800 A, V GE =15 V, R G =0 , Inductive load G-E short-circuited, Refer to fig. of test circuit (Note5) I E =800 A, Unit Min. I C =800 A, I E =800 A, (Note1) (Terminal) V EC V CE =V CES , G-E short-circuited I C =800 A, V CEsat Limits Conditions T j =25 C - 1.85 2.30 T j =125 C - 1.85 - T j =150 C - 1.85 - T j =25 C - 1.70 2.15 G-E short-circuited, T j =125 C - 1.70 - (Note5) T j =150 C V V nF nC ns V V - 1.70 - Reverse recovery time V CC =600 V, I E =800 A, V GE =15 V, - - 300 ns Reverse recovery charge R G =0 , Inductive load - 42.8 - C E on Turn-on switching energy per pulse V CC =600 V, I C =I E =800 A, - 107 - E off Turn-off switching energy per pulse V GE =15 V, R G =0 , - 82 - Reverse recovery energy per pulse T j =150 C, Inductive load - 71 - mJ R CC'+EE' Internal lead resistance Main terminals -chip, per switch, T C =25 C (Note4) - - 0.4 m rg Internal gate resistance Per switch - 2.45 - t rr (Note1) Q rr E rr (Note1) (Note1) Publication Date : September 2013 2 mJ < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE THERMAL RESISTANCE CHARACTERISTICS Symbol R th(j-c)Q Item Junction to case, per IGBT Thermal resistance R th(j-c)D R th(c-s) Limits Conditions Junction to case, per DIODE (Note4) (Note4) Case to heat sink, per 1/2 module, Contact thermal resistance (Note4, 6) Thermal grease applied Unit Min. Typ. Max. - - 28 K/kW - - 45 K/kW - 15 - K/kW MECHANICAL CHARACTERISTICS Symbol Item Limits Conditions Min. Typ. Max. Unit Main terminals M 8 screw 8.8 9.8 10.8 Mounting torque Auxiliary G/Es Terminals M 4 screw 1.3 1.5 1.7 Mounting to heat sink M 6 screw 3.5 4.0 4.5 m mass - - 1200 - g ec Flatness of base plate On the centerline X, Y -100 - +100 m Mt Ms (Note7) N*m N*m -: Concave +: Convex Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (T C ) and heat sink temperature (T S ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. 6. Typical value is measured by using thermally conductive grease of =0.9 W/(m*K). 7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X Bottom -: Concave Bottom Label side +: Convex Bottom *. DC current rating is limited by power terminals. RECOMMENDED OPERATING CONDITIONS Symbol Item Conditions V CC (DC) Supply voltage Applied across C1-E2 V GEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 RG External gate resistance Per switch Publication Date : September 2013 3 Limits Min. Typ. Max. Unit - 600 850 V 13.5 15.0 16.5 V 0 - 5.1 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE CHIP LOCATION (Top view) Dimension in mm, tolerance: 1 mm Tr1/Tr2: IGBT, Di1/Di2: DIODE TEST CIRCUIT C1 C1 VGE=15V V Shortcircuited G1 IC G1 V VGE =15V Tr1 C2E1 C2E1 Shortcircuited Di1 Di2 V EC test circuit Publication Date : September 2013 4 E2 Es2 E2 Es2 Tr2 IE G2 G2 V C E s a t test circuit V Es1 E2 Es2 E2 G1 Es1 Shortcircuited IC G2 G2 Es2 V C2E1 C2E1 Shortcircuited IE Shortcircuited G1 Es1 Es1 C1 C1 Shortcircuited < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE iE TEST CIRCUIT AND WAVEFORMS vGE C1 90 % 0V iE t + C2E1 V CC IE iC Es1 +V GE -V GE iC 0A E2 tr td ( o n ) tf td ( o ff ) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE 0 iC iC VCC 0.1xICM 0.1xVCC ICM VCC t 0.5xI r r 10% Es2 ICM t Irr vCE G2 vGE trr 0A 90 % RG 0V Q r r =0.5xI r r xt r r Load G1 -VGE 0 0 0.1xVCC IEM vEC vCE 0.02xICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0A t 0V t ti DIODE Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : September 2013 5 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 C V GE =15 V (Chip) 13.5 VGE=20 V 15 1200 1000 11 800 600 T j =125 C 3.0 12 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (A) 1400 10 400 9 T j =150 C 2.5 2.0 T j =25 C 1.5 1.0 0.5 200 0.0 0 0 2 4 6 0 10 8 COLLECTOR-EMITTER VOLTAGE 200 V CE (V) T j =25 C 400 600 800 1000 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 1400 1600 I C (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) (Chip) 10000 10 T j =125 C 8 I E (A) I C =1600 A I C =800 A 1000 T j =150 C 6 EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) (Chip) 3.5 1600 I C =320 A 4 100 T j =25 C 2 0 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 10 20 0.0 V GE (V) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE Publication Date : September 2013 6 2.5 V EC (V) 3.0 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V CC =600 V, V GE =15 V, R G =0 , INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V CC =600 V, I C =800 A, V GE =15 V, INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C 1000 1000 t d(on) t d(off) t d(off) tr t d(on) SWITCHING TIME SWITCHING TIME (ns) (ns) tf 100 tf 100 tr 10 10 10 100 COLLECTOR CURRENT 1000 0.1 I C (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V CC =600 V, V GE =15 V, R G =0 , INDUCTIVE LOAD, PER PULSE ---------------: T j =150 C, - - - - -: T j =125 C 100 R G () 10 E rr SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) (mJ) 1000 SWITCHING ENERGY E off SWITCHING ENERGY E on (mJ) REVERSE RECOVERY ENERGY (mJ) E off 100 10 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V CC =600 V, I C /I E =800 A, V GE =15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 C, - - - - -: T j =125 C 100 1000 1 EXTERNAL GATE RESISTANCE E on 100 E off E rr E on 10 10 100 1 1000 10 0.1 COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) 1 10 EXTERNAL GATE RESISTANCE Publication Date : September 2013 7 100 R G () < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) V CC =600 V, V GE =15 V, R G =0 , INDUCTIVE LOAD ---------------: T j =150 C, - - - - -: T j =125 C G-E short-circuited, T j =25 C 1000 1000 I rr C ies t rr t r r (ns), I r r (A) CAPACITANCE (nF) 100 10 C oes 100 1 C res 0.1 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 10 100 I E (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) V C C = 600 V, I C = 800 A, T j =25 C Single pulse, T C =25C R t h ( j - c ) Q =28 K/kW, R t h ( j - c ) D =45 K/kW Z th(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE V GE (V) GATE-EMITTER VOLTAGE 1000 EMITTER CURRENT 20 15 10 5 0 0 100 V CE (V) 500 1000 1500 GATE CHARGE 2000 2500 3000 Q G (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) Publication Date : September 2013 8 0.1 1 10 < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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(c) 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : September 2013 9