© 2011 IXYS All rights reserved 1 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
IGBT Module
H Bridge
VCES = 1200 V
IC25 = 183 A
VCE(sat) = 1.8 V
Features:
• SPT+ IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient
for easy parallelling
• MOS input, voltage controlled
• SONIC™ free wheeling diode
- fast and soft reverse recovery
- low operation forward voltage
• solderable pins for PCB mounting
• package with copper base plate
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
Part name (Marking on product)
MIEB101H1200EH
E72873
19
3
4
1
2
9
10
13, 21
15
14, 20
11
12
T1
D1
T2
D2
T3
D3
T4
D4
© 2011 IXYS All rights reserved 2 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
Output Inverter D1 - D4
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
135
90
A
A
VFforward voltage
(on chip level)
IF = 100 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
2.00
1.95
2.20
2.25
V
V
Irr
trr
Qrr
Erec
max. reverse recovery current
reverse recovery time
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W TVJ = 125°C
LS = 70 nH
120
330
12.5
4.2
A
ns
µC
mJ
RthJC thermal resistance junction to case (per diode) 0.4 K/W
Ouput Inverter T1 - T4
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
183
128
A
A
Ptot total power dissipation TC = 25°C 630 W
VCE(sat) collector emitter saturation voltage
(on chip level)
IC = 100 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.0
2.2
2.4
V
V
VGE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25°C 5 6 7 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 0.9
0.3
3
mA
mA
IGES gate emitter leakage current VGE = ±20 V 200 nA
Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 7430 pF
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 750 nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
inductive load TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH
120
55
460
240
9.5
9.7
4.2
ns
ns
ns
ns
mJ
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 10 W;
TVJ = 125°C
VCEK = 1200 V 200 A
SCSOA
tSC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±10 V; TVJ = 125°C
RG = 3.9 W; non-repetitive
10 µs
RthJC thermal resistance junction to case (per IGBT) 0.2 K/W
TC = 25°C unless otherwise stated
© 2011 IXYS All rights reserved 3 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz t = 1 min
t = 1 s
3000
3600
V~
V~
CTI comparative tracking index 200
Mdmounting torque (M5) 3 6 Nm
Rpin to chip see 1.8 mW
dS
dA
creep distance on surface
strike distance through air
12.7
9.6
mm
mm
RthCH thermal resistance case to heatsink with heatsink compound 0.1 K/W
Weight 300 g
VCE = VCE(sat) + 2x Rpin to chip · IC TC = 25°C unless otherwise stated
Curves are measured on modul level except Fig. 14 to Fig. 17
© 2011 IXYS All rights reserved 4 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
XXX XX-XXXXX YYCWx
Part name
Date Code
Logo Prod.Index
2D Data Matrix
FOSS-ID 6 digits
Part number
M = Module
I = IGBT
E = SPT
B = 2nd Generation
101 = Current Rating [A]
H = H~ Bridge
1200 = Reverse Voltage [V]
EH = E3-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIEB101H1200EH MIEB101H1200EH Box 5 510534
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
Remark:
Dimensions without tolerances acc. DIN ISO 2768-T1-m
19
3
4
1
2
9
10
13, 21
15
14, 20
11
12
T1
D1
T2
D2
T3
D3
T4
D4
© 2011 IXYS All rights reserved 5 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
Transistor T1 - T4
0 1 2 3 4 5
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160 180 200
0
5
10
15
20
25
30
0
25
50
75
100
125
150
0 1 2 3 4 5
0
50
100
150
200
250
300
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
50
100
150
200
250
0 200 400 600 800 1000
0
5
10
15
20
T
VJ
= 25°C T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
0 20 40 60 80 100 120 140 160 180 200
0
100
200
300
400
500
600
0
4
8
12
16
20
24
E
[mJ]
t
d(off)
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. transfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. turn-on energy & switching times
versus collector current
t
f
Fig. 6 Typ. turn-off energy & switching times
versus collector current
I
C
[A]
E
[mJ]
I
C
[A]
R
G
= 10 Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
V
GE
= 15 V
T
VJ
= 125°C
I
C
= 100 A
V
CE
= 600 V
t
[ns]
t
d(on)
t
r
R
G
= 10 Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
[ns]
E
off
E
rec(off)
E
on
© 2011 IXYS All rights reserved 6 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30 35
0
5
10
15
20
0
50
100
150
200
E
[mJ]
E
[mJ]
RG [Ω]
Eoff
Fig. 7 Typ. turn-on energy and switching times
versus gate resistor
Fig. 8 Typ. turn-off energy and switching times
versus gate resistor
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
t
[ns]
RG [Ω]
td(off)
tf
IC = 100 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
t
[ns]
Erec(off)
td (on)
Eon
tr
Transistor T1 - T4
© 2011 IXYS All rights reserved 7 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
Diode D1 - D4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
50
100
150
200
250
300
IF
[A]
VF [V]
Fig. 9 Typ. forward characteristics
1000 1500 2000 2500 3000
0
50
100
150
200
250
300
0
100
200
300
400
500
600
Irr
[A]
diF /dt [A/µs]
33 Ω
Fig. 10 Typ. reverse recovery characteristics
Fig. 11 Typ. reverse recovery characteristics
0 25 50 75 100 125 150 175 200 225
0
25
50
75
100
125
150
175
200
0
10
20
30
40
Irr
[A]
IF [A]
Irr
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
tp [s]
ZthJC
[K/W]
Fig. 12 Typ. transient thermal impedance
IGBT
Diode
trr
[ns]
IF = 100 A
Vr = 600 V
TVJ = 125°C
22 Ω
10 Ω
3.3
Ω
Qrr
Rg = 10 Ω
Vr = 600 V
TVJ = 125°C
Qrr
[µC]
trr
Irr
10 Ω
22 Ω
33 Ω
TVJ = 125°C
TVJ = 25°C
RG =
IGBT FRD
Ri τi Ri τi
0.003 0.00001 0.015 0.0005
0.010 0.0014 0.04 0.006
0.057 0.021 0.09 0.025
0.130 0.1 0.255 0.125
Fig. 13 Thermal coefficients
© 2011 IXYS All rights reserved 8 - 8
20110615a
MIEB 101H1200EH
IXYS reserves the right to change limits, test conditions and dimensions.
1000 1200 1400 1600 1800 2000 2200
4
8
12
16
20
24
Qrr
[µC]
diF /dt [A/µs]
TVJ = 125°C
VR = 600 V
50 A
100 A
200 A
Fig. 14 Typ. reverse recov.charge Qrr vs. di/dt
1000 1200 1400 1600 1800 2000 2200
0
100
200
300
400
500
600
700
trr
[ns]
diF /dt [A/µs]
200 A
50 A
100 A
TVJ = 125°C
VR = 600 V
Fig. 16 Typ. recovery time trr versus di/dt
Fig. 15 Typ. peak reverse current IRM vs. di/dt
diF /dt [A/µs]
1000 1200 1400 1600 1800 2000 2200
40
60
80
100
120
140
160
Irr
[A]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
Fig. 17 Typ. recovery energy Erec versus di/dt
Erec
[mJ]
diF /dt [A/µs]
200 A
50 A
100 A
1000 1200 1400 1600 1800 2000 2200
0
2
4
6
8
TVJ = 125°C
VR = 600 V
Diode D1 - D4
