MOTORCLA SC XSTRS/R F leE D a 636?e54 0065433 & i THAd- 17 BC212, A, B BC213, A, B, C MAXIMUM RATINGS Rating Symbol | BC] BC] BC Unit BC214, B, C 212/213/214 Collector-Emitter Voltage VCEO 50 | 30 | 30 Vde Collector-Base Voltage Vcpo | 60 {45 | 45 Vdc CASE 29-04, STYLE 17 Emitter-Base Voltage VEBO 5.0 Vdc TO-92 (TO-226AA) Collector Current Continuous Ic 100 mAdc Total Device Dissipation @ TA = 25C Pp 350 mW SY 4 Collector Derate above 25C 2.8 mW/C Total Device Dissipation @ Tc = 26C Pp 1.0 Watt 2 Derate above 25C t 8.0 mw/C Base Operating and Storage Junction Ty. Tstg |55 to +150 C Temperature Range Vy 3 Emitter THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit AMPLIFIER TRANSISTORS Thermal Resistance, Junction to Case Rauc 125 C/W Thermal Resistance, Junction to Ambient Raa 367 C/W PNP SILICON Refer to BC307 for graphs, ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) | Characteristic | Type [ symbol | Min | Typ | Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vde (Ic = 2.0 mAde, Ig = 0) BC212 50 _ _ BC213 30 _ -_ BC214 30 _ _ Collector-Base Breakdown Voltage V(BR)CBO Vde (I = 10pA, Ie = 0) BC212 60 _ _ BC213 45 _ _ BC214 45 Emitter-Base Breakdown Voltage V(BRJEBO Vde (le = 10pAde, Ic = 0) BC212 5 _ _ BC213 5 _ - BC214 5 _ _ Collector-Emitter Leakage Current IcBo nAdc (VcB = 30 V) BC212 _ _ 15 BC213 _ _ 15 BC214 _ _ 15 Emitter-Base Leakage Current lEBO nAdc (VEB = 4 V, Ic = 0) BC212 _ _ 15 BC213 _ _ 15 BC214 _ _ 15 ON CHARACTERISTICS DC Current Gain hre (Ic = 10 pAdc, Voce = 5 Vde) BC212 40 _ _ BC213 40 _ _ BC214 400 _ _ {Ic = 2 mAdc, VcE = 5 Vde) BC212 60 _ _ BC213 80 _ _ BC2T4 140 _ 600 (Ic = 100 mAdc, VcE = 5 Vdo)* BC212, BC214 _ 120 _ BC213 _ 140 _ MOFOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-78 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted) MOTORCLA SC XSTRS/R F - , BC212, A, B, BC213, A, B, C, BC214, B, C 12E D Bezez2su onasa3y ay 7-29-19 Characteristic Type Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage VCE(sat} Vde (I = 10 mAdgc, !g = 0.6 mAdc} - 0.10 _ (ic = 100 mAde, Ip = 5 mAdc)* _ 0.25 0.6 Base-Emitter Saturation Voltage VBE(sat) Vde (ic = 100 mAde, Ip = 5 mAdc) 1.00 1.4 Base-Emitter on Voltage VBE{on) Vde {I = 2 mAdc, Vce = 5 Vde) 0.6 0.62 0,72 DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product {T MHz (I = 10 mAdc, VcE = 5 Vde, . f = 50 MHz) BC212 - 280 _ BC214 _ 320 _ BC213 _ 360 _ Common-Base Output Capacitance Cob pF (Vcp = 10 Vde, Ic = 0, f = MHz) _ _ 6.0 Noise Figure NF dB (Ic = 0.2 mAde, VcE = 5 Vde, Rg = 2 Kohms, f = 30 Hz to 15 KHz) BC214 _ _ 2 (I = 0.2 mAdc, VcE = 5 Vde, Rg = 2 Kohms, f = 1 KHz, f = 200 Hz} BC213 _ _ 10 BC212 - _ 10 Small Signal Current Gain hfe (Ic = 2 mAdc, VcE =5 Vde, f = 1 KHz) 8C212 60 _ _ BC213 80 _ _ BC214 140 BC212A, BC213A 100 _ 300 BC212B, BC213B, 200 400 BC214B 200 - 400 BC213C, BC214C 350 _ 600 *Pulse-test: Tp 300 s, Duty-cycle 2%. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-79 Sma Mie =