MBR2535CT - Fairchild Semiconductor

MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers

MBR2535CT - MBR2560CT Rev. 1.3.0 1

June 2013

MBR2535CT - MBR2560CT

25 A Schottky Barrier Rectifiers

Features

• Low Power Loss, High Efficiency

• High Surge Capacity

• Metal Silicon Junction, Majority Carrier Conduction

• High Current Capacity, Low Forward Voltage Drop

• Guard Ring for Over-V oltage Protection (OVP)

Applications

• Low-Voltage, High-Frequency Inverters

• Free Wheeling and Polarity Pro te ctio n

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresse s ab ove the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Thermal Characteristics

Symbol Parameter Value Units

2535CT 2545CT 2550CT 2560CT

VRRM Maximum Repetitive Reverse Voltage 35 45 50 60 V

IF(AV) Average Rectified Forw ard Current

.375 inch Lead Length at TA = 130°C 25 A

IFSM Non-Repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave 200 A

TSTG Storage Temperature Range -65 to +175 °C

TJOperating Junction Temperature Range -65 to +150 °C

Symbol Parameter Value Units

PDPower Dissipation 2.0 W

RθJA Thermal Resistance, Junction to Ambient 60 °C/W

RθJL Thermal Resistance, Junction to Lead 1.5 °C/W

TO-220AB

PIN1

PIN3 CASE

PIN2

MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers

MBR2535CT - MBR2560CT Rev. 1.3.0 2

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Units

2535CT 2545CT 2550CT 2560CT

VFMaximum Forward Voltage,

per Leg

IF = 12.5A, TC = 25°C0.75V

IF = 12.5A, TC = 125°C0.65

IF = 25A, TC = 25°C0.82

IF = 25A, TC = 125°C0.73

IRMaximum Reverse Current

at Rated VRRM, per Leg TA = 25°C0.20.2mA

TA = 125°C 15.0 10.0

IRRM Peak Repetitive Reverse Surge Current, per Le g

2.0 μs Pulse Width, f = 1.0 kHz 1.0 0.5 A

CjTypical Junction Capacitance, per Leg 600 460 pF

MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers

MBR2535CT - MBR2560CT Rev. 1.3.0 3

Typical Performance Characteristics

Figure 1. Forward Current Derating Curve Figure 2. Non-Rep etitive Surge Current, per Leg

Figure 3. Forward Voltag e Characteristics, per Leg Figure 4. Revers e Current vs. Reverse Voltage, per

Leg

Figure 5. Total Capacitance, per Leg Figure 6. Thermal Impedance Characteristics

0 50 100 150

RESISTIVE O R

INDUCTIVE LOAD

Average Forward Current [A]

Case Tem peratu re [oC]

0 0.2 0.4 0.6 0.8 1 1.2

0.01

0.1

Forward Voltage, VF [V]

Forward Current, IF [A]

Pulse Width = 300μ

μμ

μS

2% Duty Cycle

T = 25 C

T = 150 C

MBR2535CT-MBR2545CT

MBR2550CT-MBR2560CT

0 20406080100120140

0.001

0.01

0.1

Percent of Rated Peak Reverse Voltage [%]

Reverse Current, IR [mA]

T = 25 C º

T = 75 C

T = 125 C

MBR2535CT-MBR2545CT

MBR2550CT-MBR2560CT

MBR2535CT-MBR2545CT

0.1 1 10 100

100

200

500

1000

2000

5000

Reverse Voltage, VR [V]

Total Capacitance, CT [pF]

MBR2535CT-MBR2545CT

MBR2550CT-MBR2560CT

0.01 0.1 1 10 100

0.1

100

Pulse Duration [s]

Transient Thermal Impedance [ºC/W]

MBR2535CT - MBR2560CT — 25 A Schottky Barrier Rectifiers

MBR2535CT - MBR2560CT Rev. 1.3.0 4

Physical Dimensions

Figure 7. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE)

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For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03_TC.pdf.

TO-220 3L

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Rev. I64

Mouser Electronics

Authorized Distributor

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