V
RRM
= 20 V - 40 V
I
F(AV)
= 75 A
Features
• High Surge Capability DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol MBR7520(R) MBR7530(R) Unit
Repetitive peak reverse voltag V
RRM
20 30 V
RMS reverse voltage V
RMS
14 21 V
DC blocking voltage
V
DC
20
30
V
2. Reverse polarity (R): Stud is anode.
MBR7520 thru MBR7540R
MBR7540(R
)
35
25
MBR7535(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
Conditions
40
28
40
35
• Types from 20 V to 40 V V
RRM
DC
blocking
voltage
V
DC
20
30
V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MBR7520(R) MBR7530(R) Unit
Average forward current (per
pkg) I
F(AV)
75 75 A
Maximum forward voltage
(per leg) 0.75 0.75
11
10 10
20 20
Thermal characteristics
Thermal resistance, junction-
case (per leg) R
ΘJC
0.6 0.6 °C/W
Inch ponds
(in-pb)
20
T
j
= 25 °C
I
FM
= 75 A, T
j
= 25 °C
Conditions
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
I
R
V
F
-55 to 150
MBR7540(R
)
11
MBR7535(R)
0.6
T
j
= 150 °C
0.6
0.75 0.75
20
mA
V
-55 to 150 -55 to 150
40
35
T
C
= 125 °C 75 75
Peak forward surge current
(per leg) I
FSM
t
p
= 8.3 ms, half sine 1000 1000 1000 1000 A
T
j
= 100 °C 10 10
Mounting torque 30 30 30 30
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MBR7520 thru MBR7540R
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Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR7520 thru MBR7540R
DO- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93 5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 ----- 7.00
K 0.236 ----- 6.00 -----
M ----- 0.589 ----- 14.96
N ----- 0.063 ----- 1.60
P 0.140 0.175 3.56 4.45
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