2N4398
2N4399
2N5745
PNP SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4398 series
types are PNP silicon power transistors designed for
power amplifier and switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N4398 2N4399 2N5745 UNITS
Collector-Base Voltage VCBO 40 60 80 V
Collector-Emitter Voltage VCEO 40 60 80 V
Emitter-Base Voltage VEBO 5.0 5.0 5.0 V
Continuous Collector Current IC 30 30 20 A
Peak Collector Current ICM 50 A
Continuous Base Current IB 7.5 A
Peak Base Current IBM 15 A
Power Dissipation PD 200 W
Power Dissipation (TA=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JA 35 °C/W
Thermal Resistance JC 0.875 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N4398 2N4399 2N5745
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICBO V
CB=Rated VCBO - 1.0 - 1.0 - 1.0 mA
ICEX V
CE=Rated VCEO, VEB=1.5V - 5.0 - 5.0 - 5.0 mA
ICEX V
CE=30V, VEB=1.5V, TC=150°C - 10 - 10 - - mA
ICEX V
CE=80V, VEB=1.5V, TC=150°C - - - - - 10 mA
ICEO V
CE=Rated VCEO - 5.0 - 5.0 - 5.0 mA
IEBO V
EB=5.0V - 5.0 - 5.0 - 5.0 mA
BVCEO IC=200mA 40 - 60 - 80 - V
VCE(SAT) IC=10A, IB=1.0A - 0.75 - 0.75 - 1.0 V
VCE(SAT) IC=15A, IB=1.5A - 1.0 - 1.0 - 1.5 V
VCE(SAT) IC=20A, IB=2.0A - 2.0 - 2.0 - - V
VCE(SAT) IC=20A, IB=4.0A - - - - - 2.0 V
VCE(SAT) IC=30A, IB=6.0A - 4.0 - 4.0 - - V
VBE(SAT) IC=10A, IB=1.0A - 1.6 - 1.6 - 1.7 V
VBE(SAT) IC=15A, IB=1.5A - 1.85 - 1.85 - 2.0 V
VBE(SAT) IC=20A, IB=2.0A - 2.5 - 2.5 - - V
VBE(SAT) IC=20A, IB=4.0A - - - - - 2.5 V
VBE(ON) VCE=2.0V, IC=10A - - - - - 1.5 V
VBE(ON) VCE=2.0V, IC=15A - 1.7 - 1.7 - - V
VBE(ON) VCE=4.0V, IC=20A - - - - - 2.5 V
VBE(ON) VCE=4.0V, IC=30A - 3.0 - 3.0 - - V
TO-3 CASE
R0 (30-July 2012)
www.centralsemi.com
2N4398
2N4399
2N5745
PNP SILICON
POWER TRANSISTOR
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N4398 2N4399 2N5745
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
hFE VCE=2.0V, IC=1.0A 40 - 40 - 40 -
hFE VCE=2.0V, IC=10A - - - - 15 60
hFE VCE=2.0V, IC=15A 15 60 15 60 - -
hFE VCE=2.0V, IC=20A - - - - 5.0 -
hFE VCE=4.0V, IC=30A 5.0 - 5.0 - - -
hfe VCE=10V, IC=1.0A, f=1.0kHz 40 - 40 - 40 -
fT VCE=10V, IC=1.0A, f=1.0MHz 4.0 - 4.0 - 2.0 - MHz
tr VCC=30V, IC=10A, IB1=IB2=1.0A - 0.4 - 0.4 - 1.0 μs
ts VCC=30V, IC=10A, IB1=IB2=1.0A - 1.5 - 1.5 - 2.0 μs
tf VCC=30V, IC=10A, IB1=IB2=1.0A - 0.6 - 0.6 - 1.0 μs
www.centralsemi.com
R0 (30-July 2012)
