MBR2530CT thru 2560CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
MBR
2550CT
50
35
50
MBR
2560CT
60
42
60
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward
Voltage (per leg)
at (Note 1)
30
150
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C 1.0
50.0
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
0.75
0.65
-
-
Voltage rate of change (Rated VR)
dv/dt
V/us
10,000
Typical Thermal Resistance (Note 3)
R
0JC
C/W
1.5
@T
J
=125 C
@T
J
=25 C
@T
C
=130 C
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
13
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 30
Amperes
MBR
2545CT
45
31.5
45
MBR
2530CT
30
21
30
MBR
2535CT
35
24.5
35
MBR
2540CT
40
28
40
@T
J
=125 C
@T
J
=25 C
IF = 15A,
IF = 15A,
IF = 30A,
IF = 30A,
-
-
0.82
0.73
0.2
40.0
Typical Junction Capacitance
per element (Note 2)
C
J
450
pF
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
SEMICONDUCTOR
LITE-ON
REV. 1,Aug-2007, KTHC15
RATING AND CHARACTERISTIC CURVES
MBR2530CT thru MBR2560CT
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
10000
1000
100
0.1 4
T
J
= 25 C, f= 1MHz
MBR2530CT - MBR2540CT
MBR2545CT - MBR2560CT
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100.0
10.0
60 80 100
T
J
= 125 C
0.01
T
J
= 25 C
T
J
= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1 0.2 0.6 0.7
0.1
10
100
0.3 0.4 0.5
0.01
0.9
0.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD CURRENT ,(A)
0
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
MBR2530CT - MBR2540CT
MBR2545CT &- MBR2560CT
1.0
MBR2530CT - MBR2540CT
MBR2545CT &- MBR2560CT
T
J
= 125 C
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
8.3ms Single Half-Sine-Wave
CASE TEMPERATURE , C
25 75 100 125 150
10
0
50
40
175
30
0
20
RESISTIVE OR
INDUCTIVE LOAD