Semiconductor Group 1Apr-07-1998
SGD02N60
Preliminary data
IGBT
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated Pin 1 Pin 2 Pin 3
GCE
Type VCE ICPackage Ordering Code
SGD02N60 600V2AP-TO252 Q67040-A . . . .
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 600 V
Collector-gate voltage
RGE = 20 kΩ
VCGR 600
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 100 °C
IC
2
5.5
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 100 °C
ICpuls
4
11
Avalanche energy, single pulse
IC = 2 A, VCC = 50 V, RGE = 25 Ω
L = 1.5 mH, Tj = 25 °C
EAS
3
mJ
Power dissipation
TC = 25 °C
Ptot 30
W
Semiconductor Group 2Apr-07-1998
SGD02N60
Preliminary data
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 -
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance , junction - case RthJC -- 4.2 K/W
Thermal resistance, junction - ambient ( PCB mount)** RthJA - 50 -
** Device on 50mm x 50 mm x 1.5 mm epoxy PCB ( FR-4 ) with 6 cm2 copper area around the heat slug footprint ( one layer, 70 µm copper ).
PCB is vertical without blown air.
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Collector-emitter breakdown voltage
VGE = 0 V, IC = 0.5 mA, Tj = -55 °C
V(BR)CES 600 - -
V
Gate threshold voltage
VGE = VCE, IC = 0.15 mA, Tj = 25 °C
VGE = VCE, IC = 0.15 mA, Tj = 150 °C
VGE(th)
2
3
3
4
-
5
Collector-emitter saturation voltage
VGE = 15 V, IC = 2 A, Tj = 25 °C
VGE = 15 V, IC = 2 A, Tj = 150 °C
VCE(sat)
-
1.6
2.3
2
2.8
2.5
Zero gate voltage collector current
VCE = 600 V, VGE = 0 V, Tj = 25 °C
VCE = 600 V, VGE = 0 V, Tj = 150 °C
ICES
-
-
-
-
250
20
µA
Gate-emitter leakage current
VGE = 25 V, VCE = 0 V
IGES - - 100
nA
Semiconductor Group 3Apr-07-1998
SGD02N60
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transconductance
VCE = 20 V, IC = 2 A
gfs 0.45 1.6 -
S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Ciss - 150 190
pF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Coss - 20 25
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Crss - 10 13
Semiconductor Group Apr-07-1998
4
SGD02N60
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 150 °C
Turn-on delay time
VCC = 400 V, VGE = 15 V, IC = 2 A
RGon = 118 Ω
td(on)
- 20 30
ns
Rise time
VCC = 400 V, VGE = 15 V, IC = 2 A
RGon = 118 Ω
tr
- 15 23
Turn-off delay time
VCC = 400 V, VGE = 15 V, IC = 2 A
RGoff = 118 Ω
td(off)
- 280 420
Fall time
VCC = 400 V, VGE = 15 V, IC = 2 A
RGoff = 118 Ω
tf
- 110 165
Total turn-on loss energy *
VCC = 400 V, VGE = 15 V, IC = 2 A
RGon = 118 Ω, Tj = 150 °C
Eon
- 0.12 0.16
mJ
Total turn-off loss energy
VCC = 400 V, VGE = 15 V, IC = 2 A
RGoff = 118 Ω, Tj = 150 °C
Eoff
- 0.05 0.065
Total Gate Charge
VCC = 480 V, VGE = 15 V, IC = 2 A
QG(on) - 14 21
nC
* includes the reverse recovery losses caused by the FWD of the BUP410D
Semiconductor Group 5Apr-07-1998
SGD02N60
Preliminary data
Package Outlines
Dimensions in mm
Weight:
