SGD02N60 Preliminary data IGBT * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGD02N60 600V 2A P-TO252 Q67040-A . . . . Maximum Ratings Parameter Symbol Collector-emitter voltage V CE Collector-gate voltage V CGR RGE = 20 k Values 600 Unit V 600 Gate-emitter voltage V GE DC collector current IC 20 A TC = 25 C 5.5 TC = 100 C 2 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 11 TC = 100 C 4 Avalanche energy, single pulse mJ E AS IC = 2 A, VCC = 50 V, RGE = 25 L = 1.5 mH, Tj = 25 C 3 Power dissipation TC = 25 C Semiconductor Group W P tot 30 1 Apr-07-1998 SGD02N60 Preliminary data Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Values Unit C - Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance , junction - case RthJC - - 4.2 Thermal resistance, junction - ambient ( PCB mount)** RthJA - 50 - K/W ** Device on 50mm x 50 mm x 1.5 mm epoxy PCB ( FR-4 ) with 6 cm2 copper area around the heat slug footprint ( one layer, 70 m copper ). PCB is vertical without blown air. Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Collector-emitter breakdown voltage V V (BR)CES V GE = 0 V, IC = 0.5 mA, Tj = -55 C 600 - - V GE = VCE, IC = 0.15 mA, Tj = 25 C 3 4 5 V GE = VCE, IC = 0.15 mA, Tj = 150 C 2 3 - V GE = 15 V, IC = 2 A, Tj = 25 C 1.6 2 2.5 V GE = 15 V, IC = 2 A, Tj = 150 C - 2.3 2.8 Gate threshold voltage Collector-emitter saturation voltage Zero gate voltage collector current V GE(th) V CE(sat) A ICES V CE = 600 V, V GE = 0 V, Tj = 25 C - - 20 V CE = 600 V, V GE = 0 V, Tj = 150 C - - 250 Gate-emitter leakage current V GE = 25 V, VCE = 0 V Semiconductor Group nA IGES - 2 - 100 Apr-07-1998 SGD02N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Transconductance V CE = 20 V, IC = 2 A Input capacitance 0.45 pF - 150 190 - 20 25 - 10 13 Crss V CE = 25 V, V GE = 0 V, f = 1 MHz Semiconductor Group - Coss V CE = 25 V, V GE = 0 V, f = 1 MHz Reverse transfer capacitance 1.6 Ciss V CE = 25 V, V GE = 0 V, f = 1 MHz Output capacitance S gfs 3 Apr-07-1998 SGD02N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 150 C Turn-on delay time ns td(on) V CC = 400 V, V GE = 15 V, IC = 2 A RGon = 118 Rise time - 20 30 - 15 23 - 280 420 - 110 165 tr V CC = 400 V, V GE = 15 V, IC = 2 A RGon = 118 Turn-off delay time td(off) V CC = 400 V, V GE = 15 V, IC = 2 A RGoff = 118 Fall time tf V CC = 400 V, V GE = 15 V, IC = 2 A RGoff = 118 Total turn-on loss energy * mJ E on V CC = 400 V, V GE = 15 V, IC = 2 A RGon = 118 , Tj = 150 C Total turn-off loss energy - 0.12 0.16 - 0.05 0.065 E off V CC = 400 V, V GE = 15 V, IC = 2 A RGoff = 118 , Tj = 150 C Total Gate Charge nC QG(on) V CC = 480 V, V GE = 15 V, IC = 2 A - 14 21 * includes the reverse recovery losses caused by the FWD of the BUP410D Semiconductor Group 4 Apr-07-1998 SGD02N60 Preliminary data Package Outlines Dimensions in mm Weight: Semiconductor Group 5 Apr-07-1998