2SA1295
PNP Silicon
Power Transistors
Features
• Complement to type 2SC3264
• Audio and general applications
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 230 V
VCBO Collector-Base Voltage 230 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 17 A
PC Collector power dissipation 200 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbl Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=25mAdc, IB=0) 230 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=230Vdc,IE=0) --- 100 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0) --- 100 uAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=5.0Adc, VCE=4.0Vdc) 50 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=5.0Adc, IB=0.5Adc) --- 2.0 Vdc
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .122 .130 3.10 3.30 2-
B .839 .854 21.30 21.70
C .787 --- 20.00 ---
D --- .157 --- 4.00
E 1.421 1.445 36.10 36.70
F .945 .961 24.00 24.40
G .211 .219 5.35 5.55
H .354 9.00
I .079 2.00
J .118 3.00
K .037 .049 .95 1.25
L .211 .219 5.35 5.55
M .276 7.00
N .228 .244 5.80 6.20
O .083 2.10
P .022 .033 .55 .85
Q .114 .130 2.90 3.30
∅
MT-200
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2 2003/04/30
PIN 1. BASE
PIN 2. COLLECTOR
1 2 3
PIN 3. EMITTER
