MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1295 Features * * PNP Silicon Power Transistors Complement to type 2SC3264 Audio and general applications Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 230 230 5.0 17 200 -55 to +150 -55 to +150 MT-200 Unit V V V A W O C O C 1 2 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbl Parameter Min Max PIN 1. PIN 2. PIN 3. Units OFF CHARACTERISTICS V (BR)CEO ICBO IEBO V CE(sat) BASE COLLECTOR EMITTER DIMENSIONS Collector-Emitter Breakdown Voltage* (IC=25mAdc, IB =0) Collector-Base Cutoff Current (VCB=230Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) 230 --- Vdc --- 100 uAdc --- 100 uAdc 50 --- --- 2.0 Vdc ON CHARACTERISTICS hFE 3 Forward Current Transfer ratio (IC=5.0Adc, V CE=4.0Vdc) Collector-Emitter Saturation Voltage (IC=5.0Adc, IB =0.5Adc) --- DIM A B C D E F G H I J K L M N O P Q INCHES MIN .122 .839 .787 --1.421 .945 .211 .354 .079 .118 .037 .211 .276 .228 .083 .022 .114 MAX .130 .854 --.157 1.445 .961 .219 .049 .219 .244 .033 .130 MM MIN 3.10 21.30 20.00 --36.10 24.00 5.35 9.00 2.00 3.00 .95 5.35 7.00 5.80 2.10 .55 2.90 MAX 3.30 21.70 --4.00 36.70 24.40 5.55 NOTE 2- 1.25 5.55 6.20 .85 3.30 www.mccsemi.com Revision: 2 2003/04/30