Quad-Serial Configuration (EPCQ)
Devices Datasheet
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Contents
1. Quad-Serial Configuration (EPCQ) Devices Datasheet.....................................................4
1.1. Supported Devices.................................................................................................4
1.2. Features...............................................................................................................5
1.3. Operating Conditions..............................................................................................5
1.3.1. Absolute Maximum Ratings......................................................................... 5
1.3.2. Recommended Operating Conditions............................................................ 6
1.3.3. DC Operating Conditions.............................................................................6
1.3.4. ICC Supply Current.................................................................................... 7
1.3.5. Capacitance.............................................................................................. 7
1.4. Memory Array Organization.....................................................................................7
1.4.1. Address Range for EPCQ16......................................................................... 8
1.4.2. Address Range for EPCQ32......................................................................... 9
1.4.3. Address Range for EPCQ64......................................................................... 9
1.4.4. Address Range for EPCQ128...................................................................... 11
1.4.5. Address Range for EPCQ256...................................................................... 13
1.4.6. Address Range for EPCQ512/A...................................................................16
1.5. Memory Operations..............................................................................................16
1.5.1. Timing Requirements................................................................................17
1.5.2. Addressing Mode..................................................................................... 17
1.6. Registers............................................................................................................ 17
1.6.1. Status Register........................................................................................ 17
1.6.2. Flag Status Register................................................................................. 26
1.6.3. Non-Volatile Configuration Register.............................................................27
1.7. Summary of Operation Codes................................................................................ 29
1.7.1. 4BYTEADDREN and 4BYTEADDREX Operations (B7h and E9h)........................ 30
1.7.2. Write Enable Operation (06h).................................................................... 31
1.7.3. Write Disable Operation (04h)................................................................... 31
1.7.4. Read Bytes Operation (03h)...................................................................... 32
1.7.5. Fast Read Operation (0Bh)........................................................................ 33
1.7.6. Extended Dual Input Fast Read Operation (BBh)...........................................33
1.7.7. Extended Quad Input Fast Read Operation (EBh)..........................................34
1.7.8. Read Device Identification Operation (9Fh)..................................................34
1.7.9. Write Bytes Operation (02h)......................................................................35
1.7.10. Extended Dual Input Fast Write Bytes Operation (D2h)................................36
1.7.11. Extended Quad Input Fast Write Bytes Operation (12h or 38h)..................... 36
1.7.12. Erase Bulk Operation (C7h)..................................................................... 37
1.7.13. Erase Sector Operation (D8h).................................................................. 38
1.7.14. Erase Subsector Operation...................................................................... 39
1.8. Power Mode........................................................................................................ 40
1.9. Timing Information.............................................................................................. 40
1.9.1. Write Operation Timing.............................................................................40
1.9.2. Read Operation Timing............................................................................. 42
1.10. Programming and Configuration File Support......................................................... 42
1.11. Pin Information..................................................................................................43
1.11.1. Pin-Out Diagram for EPCQ16 and EPCQ32 Devices......................................43
1.11.2. Pin-Out Diagram for EPCQ64, EPCQ128, EPCQ256, and EPCQ512/A Devices...44
1.11.3. EPCQ Device Pin Description.................................................................... 44
Contents
Quad-Serial Configuration (EPCQ) Devices Datasheet
2
1.12. Device Package and Ordering Code.......................................................................46
1.12.1. Package................................................................................................ 46
1.12.2. Ordering Code....................................................................................... 46
1.13. Document Revision History for Quad-Serial Configuration (EPCQ) Devices Datasheet...47
Contents
Quad-Serial Configuration (EPCQ) Devices Datasheet
3
1. Quad-Serial Configuration (EPCQ) Devices Datasheet
This datasheet describes quad-serial configuration (EPCQ) devices. EPCQ is an in-
system programmable NOR flash memory.
1.1. Supported Devices
Table 1. Supported Intel EPCQ Devices
Note: EPCQ devices are scheduled for product obsolescence and discontinued support as described
in PDN1708 and PDN1802. Intel® recommends that you use the EPCQ-A configuration
devices.
Device Memory Size
(bits)
On-Chip
Decompression
Support
ISP Support Cascading
Support
Reprogrammab
le
Recommend
ed Operating
Voltage (V)
EPCQ16 16,777,216 No Yes No Yes 3.3
EPCQ32 33,554,432 No Yes No Yes 3.3
EPCQ64 67,108,864 No Yes No Yes 3.3
EPCQ128 134,217,728 No Yes No Yes 3.3
EPCQ256 268,435,456 No Yes No Yes 3.3
EPCQ512/A (1) 536,870,912 No Yes No Yes 3.3
Related Information
PDN1708
Product discontinuance notification.
PDN1802
Product discontinuance notification.
AN822: Intel Configuration Device Migration Guideline
Provides more information about migrating EPCQ to EPCQ-A devices.
Quad-Serial Configuration (EPCQ-A) Devices Datasheet
(1) EPCQ512/A is shown in the Intel Quartus® Prime software as EPCQ512.
CF52012 | 2018.06.01
Intel Corporation. All rights reserved. Intel, the Intel logo, Altera, Arria, Cyclone, Enpirion, MAX, Nios, Quartus
and Stratix words and logos are trademarks of Intel Corporation or its subsidiaries in the U.S. and/or other
countries. Intel warrants performance of its FPGA and semiconductor products to current specifications in
accordance with Intel's standard warranty, but reserves the right to make changes to any products and services
at any time without notice. Intel assumes no responsibility or liability arising out of the application or use of any
information, product, or service described herein except as expressly agreed to in writing by Intel. Intel
customers are advised to obtain the latest version of device specifications before relying on any published
information and before placing orders for products or services.
*Other names and brands may be claimed as the property of others.
ISO
9001:2008
Registered
1.2. Features
EPCQ devices offer the following features:
Serial or quad-serial FPGA configuration in devices that support active serial (AS)
x1 or AS x4 configuration schemes(2)
Low cost, low pin count, and non-volatile memory
2.7-V to 3.6-V operation
Available in 8- or 16- small-outline integrated circuit (SOIC) package
Reprogrammable memory with up to 100,000 erase or program cycles
Write protection support for memory sectors using status register bits
Fast read, extended dual input fast read, and extended quad input fast read of the
entire memory using a single operation code
Write bytes, extended dual input fast write bytes, and extended quad input fast
write bytes of the entire memory using a single operation code
Reprogrammable with an external microprocessor using the SRunner software
driver
In-system programming (ISP) support with the SRunner software driver
ISP support with Intel FPGA Download CableIntel FPGA Download Cable II, Intel
FPGA Ethernet Cable
By default, the memory array is erased and the bits are set to 1
More than 20 years data retention
Related Information
Errata Sheet for EPCQ Devices
1.3. Operating Conditions
Tables in this section list information about the absolute maximum ratings,
recommended operating conditions, DC operating conditions, ICC supply current, and
capacitance for EPCQ devices.
Note: The values of the tables in this section are finalized for EPCQ16, EPCQ32, EPCQ64,
EPCQ128, EPCQ256, and EPCQ512/A devices. The operating conditions for all of these
devices are the same unless indicated otherwise.
1.3.1. Absolute Maximum Ratings
Table 2. Absolute Maximum Ratings
Symbol Parameter Condition Min Max Unit
VCC Supply voltage With respect to GND –0.6 4 V
VI (3) DC input voltage With respect to GND –0.6 4 V
continued...
(2) AS x4 is not supported in EPCQ512 devices. Refer to the Errata Sheet for EPCQ Devices for
more information.
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Symbol Parameter Condition Min Max Unit
IMAX DC VCC or GND current 20 mA
IOUT DC output current per pin –25 25 mA
PDPower dissipation 72 mW
TSTG Storage temperature No bias –65 150 °C
TJJunction temperature Under bias 125 °C
1.3.2. Recommended Operating Conditions
Table 3. Recommended Operating Conditions
Symbol Parameter Condition Min Max Unit
VCC Supply voltage (4) 2.7 3.6 V
VIInput voltage With respect to GND -0.5 0.4 + VCC V
VOOutput voltage 0 VCC V
TA (5) Operating temperature For industrial use -40 85 °C
tRInput rise time for all devices
except EPCQ512/A
5 ns
Input rise time for EPCQ512/A 1.5 ns
tFInput fall time for all devices
except EPCQ512/A
5 ns
Input fall time for EPCQ512/A 1.5 ns
Related Information
EPCQ Package and Thermal Resistance
Provides more information about EPCQ thermal resistance.
1.3.3. DC Operating Conditions
Table 4. DC Operating Conditions
Symbol Parameter Condition Min Max Unit
VIH High-level input voltage 0.7 x VCC VCC + 0.4 V
VIL Low-level input voltage -0.5 0.3 x VCC V
VOH High-level output voltage IOH = -100 µA (6) VCC - 0.2 V
continued...
(3) For periods of less than 2 ns, VIL can undershoot to –1.0 V and VIH can overshoot to VCC + 1.0
V.
(4) The maximum VCC rise time is 100 ms.
(5) EPCQ devices can be paired with Intel FPGA industrial-grade FPGAs operating at junction
temperatures up to 100°C as long as the ambient temperature does not exceed 85°C.
(6) The IOH parameter refers to the high-level TTL or CMOS output current.
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Symbol Parameter Condition Min Max Unit
VOL Low-level output voltage IOL = 1.6 mA (7) 0.4 V
IIInput leakage current VI =VCC or GND -10 10 µA
IOZ Tri-state output off-state
current
VO = VCC or GND -10 10 µA
1.3.4. ICC Supply Current
Table 5. ICC Supply Current
Symbol Parameter Condition Min Max Unit
ICC0 VCC supply current Standby 100 µA
ICC1 VCC supply current for all
devices except EPCQ512/A
During active power mode 5 20 mA
VCC supply current for
EPCQ512/A
60 mA
1.3.5. Capacitance
Table 6. Capacitance
Capacitance is sample-tested only at TA = 25 x C and at a 54 MHz frequency.
Symbol Parameter Condition Min Max Unit
CIN Input pin capacitance VIN =0 V 6 pF
COUT Output pin capacitance VOUT =0 V 8 pF
1.4. Memory Array Organization
Table 7. Supported Memory Array Organization in EPCQ Devices
Details EPCQ16 EPCQ32 EPCQ64 EPCQ128 EPCQ256 EPCQ512/A
Bytes 2,097,152
bytes [16
megabits
(Mb)]
4,194,304
bytes (32
Mb)
8,388,608
bytes (64
Mb)
16,777,216
bytes (128
Mb)
33,554,432
bytes (256
Mb)
67,108,864
bytes (512
Mb)
Number of sectors 32 64 128 256 512 1,024
Bytes per sector 65,536 bytes [512 kilobits (Kb)]
Total numbers of subsectors
(8)
512 1,024 2,048 4,096 8,192 16,384
Bytes per subsector 4,096 bytes (32 Kb)
continued...
(7) The IOL parameter refers to the low-level TTL or CMOS output current.
(8) Every sector is further divided into 16 subsectors with 4 KB of memory. Therefore, there are
512 (32 x 16) subsectors for the EPCQ16 device, 1,024 (64 x 16) subsectors for the EPCQ32
device, 2,048 (128 x 16) subsectors for the EPCQ64 device, 4,096 (256 x 16) subsectors for
the EPCQ128 device, 8,192 (512 x 16) subsectors for the EPCQ256 device, and 16,384
(1,024 x 16) subsectors for the EPCQ512/A device.
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Details EPCQ16 EPCQ32 EPCQ64 EPCQ128 EPCQ256 EPCQ512/A
Pages per sector 256
Total number of pages 8,192 16,384 32,768 65,536 131,072 262,144
Bytes per page 256 bytes
1.4.1. Address Range for EPCQ16
Table 8. Address Range for Sectors 31..0 and Subsectors 511..0 in EPCQ16 Devices
Sector Subsector Address Range (Byte Addresses in HEX)
Start End
31 511 1FF000 1FFFFF
510 1FE000 1FEFFF
...
498 1F2000 1F2FFF
497 1F1000 1F1FFF
496 1F0000 1F0FFF
30 495 1EF000 1EFFFF
494 1EE000 1EEFFF
...
482 1E2000 1E2FFF
481 1E1000 1E1FFF
480 1E0000 1E0FFF
1 31 1F000 1FFFF
30 1E000 1EFFF
...
18 12000 12FFF
17 11000 11FFF
16 10000 10FFF
0 15 F000 FFFF
14 E000 EFFF
...
2 2000 2FFF
1 1000 1FFF
0 H'0000000 H'0000FFF
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1.4.2. Address Range for EPCQ32
Table 9. Address Range for Sectors 63..0 and Subsectors 1023..0 in EPCQ32 Devices
Sector Subsector Address Range (Byte Addresses in HEX)
Start End
63 1023 3FF000 3FFFFF
1022 3FE000 3FEFFF
...
1010 3F2000 3F2FFF
1009 3F1000 3F1FFF
1008 3F0000 3F0FFF
62 1007 3EF000 3EFFFF
1006 3EE000 3EEFFF
...
994 3E2000 3E2FFF
993 3E1000 3E1FFF
992 3E0000 3E0FFF
1 31 1F000 1FFFF
30 1E000 1EFFF
...
18 12000 12FFF
17 11000 11FFF
16 10000 10FFF
0 15 F000 FFFF
14 E000 EFFF
...
2 2000 2FFF
1 1000 1FFF
0 H'0000000 H'0000FFF
1.4.3. Address Range for EPCQ64
Table 10. Address Range for Sectors 127..0 and Subsectors 2047..0 in EPCQ64 Devices
Sector Subsector Address Range (Byte Addresses in HEX)
Start End
127 2047 7FF000 7FFFFF
2046 7FE000 7FEFFF
.. .
continued...
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Sector Subsector Address Range (Byte Addresses in HEX)
Start End
2034 7F2000 7F2FFF
2033 7F1000 7F1FFF
2032 7F0000 7F0FFF
64 1039 40F000 40FFFF
1038 40E000 40EFFF
.. .
1026 402000 402FFF
1025 401000 401FFF
1024 400000 400FFF
63 1023 3FF000 3FFFFF
1022 3FE000 3FEFFF
.. .
1010 3F2000 3F2FFF
1009 3F1000 3F1FFF
1008 3F0000 3F0FFF
62 1007 3EF000 3EFFFF
1006 3EE000 3EEFFF
.. .
994 3E2000 3E2FFF
993 3E1000 3E1FFF
992 3E0000 3E0FFF
1 31 1F000 1FFFF
30 1E000 1EFFF
.. .
18 12000 12FFF
17 11000 11FFF
16 10000 10FFF
0 15 F000 FFFF
14 E000 EFFF
.. .
22000 2FFF
11000 1FFF
0H'0000000 H'0000FFF
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1.4.4. Address Range for EPCQ128
Table 11. Address Range for Sectors 255..0 and Subsectors 4095..0 in EPCQ128
Devices
Sector Subsector Address Range (Byte Addresses in HEX)
Start End
255 4095 FFF000 FFFFFF
4094 FFE000 FFEFFF
.. .
4082 FF2000 FF2FFF
4081 FF1000 FF1FFF
4080 FF0000 FF0FFF
254 4079 FEF000 FEFFFF
4078 FEE000 FEEFFF
.. .
4066 FE2000 FE2FFF
4065 FE1000 FE1FFF
4064 FE0000 FE0FFF
129 2079 81F000 81FFFF
2078 81E000 81EFFF
.. .
2066 812000 812FFF
2065 811000 811FFF
2064 810000 810FFF
128 2063 80F000 80FFFF
2062 80E000 80EFFF
.. .
2050 802000 802FFF
2049 801000 801FFF
2048 800000 800FFF
127 2047 7FF000 7FFFFF
2046 7FE000 7FEFFF
.. .
2034 7F2000 7F2FFF
2033 7F1000 7F1FFF
2032 7F0000 7F0FFF
continued...
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Sector Subsector Address Range (Byte Addresses in HEX)
Start End
64 1039 40F000 40FFFF
1038 40E000 40EFFF
.. .
1026 402000 402FFF
1025 401000 401FFF
1024 400000 400FFF
63 1023 3FF000 3FFFFF
1022 3FE000 3FEFFF
.. .
1010 3F2000 3F2FFF
1009 3F1000 3F1FFF
1008 3F0000 3F0FFF
62 1007 3EF000 3EFFFF
1006 3EE000 3EEFFF
.. .
994 3E2000 3E2FFF
993 3E1000 3E1FFF
992 3E0000 3E0FFF
1 31 1F000 1FFFF
30 1E000 1EFFF
.. .
18 12000 12FFF
17 11000 11FFF
16 10000 10FFF
0 15 F000 FFFF
14 E000 EFFF
.. .
22000 2FFF
11000 1FFF
0H'0000000 H'0000FFF
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1.4.5. Address Range for EPCQ256
Table 12. Address Range for Sectors 511..0 and Subsectors 8191..0 in EPCQ256
Devices
Sector Subsector Address Range (Byte Addresses in HEX)
Start End
511 8191 1FFF000 1FFFFFF
8190 1FFE000 1FFEFFF
.. .
8178 1FF2000 1FF2FFF
8177 1FF1000 1FF1FFF
8176 1FF0000 1FF0FFF
510 8175 1FEF000 1FEFFFF
8174 1FEE000 1FEEFFF
.. .
8162 1FE2000 1FE2FFF
8161 1FE1000 1FE1FFF
8160 1FE0000 1FE0FFF
257 4127 101F000 101FFFF
4126 101E000 101EFFF
.. .
4114 1012000 1012FFF
4113 1011000 1011FFF
4112 1010000 1010FFF
256 4111 100F000 100FFFF
4110 100E000 100EFFF
.. .
4098 1002000 1002FFF
4097 1001000 1001FFF
4096 1000000 1000FFF
255 4095 FFF000 FFFFFF
4094 FFE000 FFEFFF
.. .
4082 FF2000 FF2FFF
4081 FF1000 FF1FFF
4080 FF0000 FF0FFF
continued...
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Sector Subsector Address Range (Byte Addresses in HEX)
Start End
254 4079 FEF000 FEFFFF
4078 FEE000 FEEFFF
.. .
4066 FE2000 FE2FFF
4065 FE1000 FE1FFF
4064 FE0000 FE0FFF
129 2079 81F000 81FFFF
2078 81E000 81EFFF
.. .
2066 812000 812FFF
2065 811000 811FFF
2064 810000 810FFF
128 2063 80F000 80FFFF
2062 80E000 80EFFF
.. .
2050 802000 802FFF
2049 801000 801FFF
2048 800000 800FFF
127 2047 7FF000 7FFFFF
2046 7FE000 7FEFFF
.. .
2034 7F2000 7F2FFF
2033 7F1000 7F1FFF
2032 7F0000 7F0FFF
64 1039 40F000 40FFFF
1038 40E000 40EFFF
.. .
1026 402000 402FFF
1025 401000 401FFF
1024 400000 400FFF
63 1023 3FF000 3FFFFF
1022 3FE000 3FEFFF
.. .
continued...
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Sector Subsector Address Range (Byte Addresses in HEX)
Start End
1010 3F2000 3F2FFF
1009 3F1000 3F1FFF
1008 3F0000 3F0FFF
62 1007 3EF000 3EFFFF
1006 3EE000 3EEFFF
.. .
994 3E2000 3E2FFF
993 3E1000 3E1FFF
992 3E0000 3E0FFF
1 31 1F000 1FFFF
30 1E000 1EFFF
.. .
18 12000 12FFF
17 11000 11FFF
16 10000 10FFF
0 15 F000 FFFF
14 E000 EFFF
.. .
22000 2FFF
11000 1FFF
0H'0000000 H'0000FFF
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1.4.6. Address Range for EPCQ512/A
Table 13. Address Range for Sectors 1023..0 and Subsectors 16383..0 in EPCQ512/A
Devices
Sector Subsector Address Range (Byte Addresses in HEX)
Start End
1023 16383 3FFF000 3FFFFFF
.. .
16368 3FF0000 3FF0FFF
. . . .
511 8191 1FFF000 1FFFFFF
.. .
8176 FF0000 1FF0FFF
. . . .
255 4095 FFF000 FFFFFF
.. .
4080 FF0000 FF0FFF
. . . .
127 2047 7FF000 7FFFFF
.. .
2032 7F0000 7F0FFF
. . . .
63 1023 3FF000 3FFFFF
.. .
1008 3F0000 3F0FFF
. . . .
0 15 F000 FFFF
.. .
0H'0000000 H'0000FFF
1.5. Memory Operations
This section describes the operations that you can use to access the memory in EPCQ
devices. When performing the operation, addresses and data are shifted in and out of
the device serially, with the MSB first.
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1.5.1. Timing Requirements
When the active low chip select (nCS) signal is driven low, shift in the operation code
into the EPCQ device using the serial data (DATA) pin. Each operation code bit is
latched into the EPCQ device on the rising edge of the DCLK.
While executing an operation, shift in the desired operation code, followed by the
address or data bytes. See related information for more information about the address
and data bytes. The device must drive the nCS pin high after the last bit of the
operation sequence is shifted in.
For read operations, the data read is shifted out on the DATA pin. You can drive the
nCS pin high when any bit of the data is shifted out.
For write and erase operations, drive the nCS pin high at a byte boundary, that is in a
multiple of eight clock pulses. Otherwise, the operation is rejected and not executed.
All attempts to access the memory contents while a write or erase cycle is in progress
are rejected, and the write or erase cycle continues unaffected.
1.5.2. Addressing Mode
The 3-byte addressing mode is enabled by default. To access the EPCQ256 or
EPCQ512/A memory, you must use the 4-byte addressing mode. In 4-byte addressing
mode, the address width is 32-bit address. To enable the 4-byte addressing mode, you
must execute the 4BYTEADDREN operation. This addressing mode takes effect
immediately after you execute the 4BYTEADDREN operation and remains active in the
subsequent power-ups. To disable the 4-byte addressing mode, you must execute the
4BYTEADDREX operation.
Note: If you are using the Intel Quartus Prime software or the SRunner software to program
the EPCQ256 or EPCQ512/A device, you do not need to execute the 4BYTEADDREN
operation. The Intel Quartus Prime software enables the 4-byte addressing mode
when programming the device automatically.
1.6. Registers
1.6.1. Status Register
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Table 14. Status Register Bits
Bit R/W Default
Value
Name Value Description
7 R/W 0 None
6 R/W 0 BP3 (Block
Protect Bit)(9)
(10)
Table 15 on page 19 through Table 26 on page
24 list the protected area with reference to
the block protect bits.
Determine the area of
the memory protected
from being written or
erased unintentionally.
5 R/W 0 TB (Top/Bottom
Bit)
1=Protected area starts from the bottom of
the memory array.
0=Protected area starts from the top of the
memory array.
Determine that the
protected area starts
from the top or
bottom of the memory
array.
4 R/W 0 BP2(9)Table 15 on page 19 through Table 26 on page
24 list the protected area with reference to
the block protect bits.
Determine the area of
the memory protected
from being written or
erased unintentionally.
3 BP1(9)
2 BP0(9)
1 R 0 WEL (Write
Enable Latch
Bit)
1=Allows the following operation to run:
Write Bytes
Write Status Register
Erase Bulk
Erase Die
Erase Sector
0=Rejects the above mentioned operations.
Allows or rejects
certain operation to
run.
0 R 0 WIP (Write in
Progress Bit)
1=One of the following operation is in
progress:
Write Status Register
Write NVCR
Write Bytes
Erase
0=no write or erase cycle in progress
Indicates if there is a
command in progress.
1.6.1.1. Read Status Register Operation (05h)
Figure 1. Read Status Operation Timing Diagram
nCS
DCLK
DATA0
DATA
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
7 6 5 4 3 2 1 0 7 2 1 0 76 5 4 3
Operation Code (05h)
MSB MSB
Status Register Out Status Register Out
High Impedance
(9) The erase bulk and erase die operation is only available when all the block protect bits are set
to 0. When any of the block protect bits are set to 1, the relevant area is protected from being
written by a write bytes operation or erased by an erase sector operation.
(10) Applicable for EPCQ64, EPCQ128, EPCQ256, and EPCQ512/A devices only.
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1.6.1.1.1. Block Protection Bits in EPCQ16 when TB Bit is Set to 0
Table 15. Block Protection Bits in EPCQ16 when TB Bit is Set to 0
Status Register Content Memory Content
TB Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 0 None All sectors
0 0 0 1 Sector 31 Sectors (0 to 30)
0 0 1 0 Sectors (30 to 31) Sectors (0 to 29)
0 0 1 1 Sectors (28 to 31) Sectors (0 to 27)
0 1 0 0 Sectors (24 to 31) Sectors (0 to 23)
0 1 0 1 Sectors (16 to 31) Sectors (0 to 15)
0 1 1 0 All sectors None
0 1 1 1 All sectors None
1.6.1.1.2. Block Protection Bits in EPCQ16 when TB Bit is Set to 1
Table 16. Block Protection Bits in EPCQ16 when TB Bit is Set to 1
Status Register Content Memory Content
TB Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 0 0 0 None All sectors
1 0 0 1 Sector 0 Sectors (1 to 31)
1 0 1 0 Sectors (0 to 1) Sectors (2 to 31)
1 0 1 1 Sectors (0 to 3) Sectors (4 to 31)
1 1 0 0 Sectors (0 to 7) Sectors (8 to 31)
1 1 0 1 Sectors (0 to 15) Sectors (16 to 31)
1 1 1 0 All sectors None
1 1 1 1 All sectors None
1.6.1.1.3. Block Protection Bits in EPCQ32 when TB Bit is Set to 0
Table 17. Block Protection Bits in EPCQ32 when TB Bit is Set to 0
Status Register Content Memory Content
TB Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 0 None All sectors
0 0 0 1 Sector 63 Sectors (0 to 62)
0 0 1 0 Sectors (62 to 63) Sectors (0 to 61)
0 0 1 1 Sectors (60 to 63) Sectors (0 to 59)
0 1 0 0 Sectors (56 to 63) Sectors (0 to 55)
continued...
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Status Register Content Memory Content
TB Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 1 0 1 Sectors (48 to 63) Sectors (0 to 47)
0 1 1 0 Sectors (32 to 63) Sectors (0 to 31)
0 1 1 1 All sectors None
1.6.1.1.4. Block Protection Bits in EPCQ32 when TB Bit is Set to 1
Table 18. Block Protection Bits in EPCQ32 when TB Bit is Set to 1
Status Register Content Memory Content
TB Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 0 0 0 None All sectors
1 0 0 1 Sector 0 Sectors (1 to 63)
1 0 1 0 Sectors (0 to 1) Sectors (2 to 63)
1 0 1 1 Sectors (0 to 3) Sectors (4 to 63)
1 1 0 0 Sectors (0 to 7) Sectors (8 to 63)
1 1 0 1 Sectors (0 to 15) Sectors (16 to 63)
1 1 1 0 Sectors (0 to 31) Sectors (32 to 63)
1 1 1 1 All sectors None
1.6.1.1.5. Block Protection Bits in EPCQ64 when TB Bit is Set to 0
Table 19. Block Protection Bits in EPCQ64 when TB Bit is Set to 0
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 0 0 None All sectors
0 0 0 0 1 Sector 127 Sectors (0 to 126)
0 0 0 1 0 Sectors (126 to 127) Sectors (0 to 125)
0 0 0 1 1 Sectors (124 to 127) Sectors (0 to 123)
0 0 1 0 0 Sectors (120 to 127) Sectors (0 to 119)
0 0 1 0 1 Sectors (112 to 127) Sectors (0 to 111)
0 0 1 1 0 Sectors (96 to 127) Sectors (0 to 95)
0 0 1 1 1 Sectors (64 to 127) Sectors (0 to 63)
0 1 0 0 0 All sectors None
0 1 0 0 1 All sectors None
0 1 0 1 0 All sectors None
0 1 0 1 1 All sectors None
0 1 1 0 0 All sectors None
continued...
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Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 1 1 0 1 All sectors None
0 1 1 1 0 All sectors None
0 1 1 1 1 All sectors None
1.6.1.1.6. Block Protection Bits in EPCQ64 when TB Bit is Set to 1
Table 20. Block Protection Bits in EPCQ64 when TB Bit is Set to 1
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 0 0 0 0 None All sectors
1 0 0 0 1 Sector 0 Sectors (1 to 127)
1 0 0 1 0 Sectors (0 to 1) Sectors (2 to 127)
1 0 0 1 1 Sectors (0 to 3) Sectors (4 to 127)
1 0 1 0 0 Sectors (0 to 7) Sectors (8 to 127)
1 0 1 0 1 Sectors (0 to 15) Sectors (16 to 127)
1 0 1 1 0 Sectors (0 to 31) Sectors (32 to 127)
1 0 1 1 1 Sectors (0 to 63) Sectors (64 to 127)
1 1 0 0 0 All sectors None
1 1 0 0 1 All sectors None
1 1 0 1 0 All sectors None
1 1 0 1 1 All sectors None
1 1 1 0 0 All sectors None
1 1 1 0 1 All sectors None
1 1 1 1 0 All sectors None
1 1 1 1 1 All sectors None
1.6.1.1.7. Block Protection Bits in EPCQ128 when TB Bit is Set to 0
Table 21. Block Protection Bits in EPCQ128 when TB Bit is Set to 0
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 0 0 None All sectors
0 0 0 0 1 Sector 255 Sectors (0 to 254)
0 0 0 1 0 Sectors (254 to 255) Sectors (0 to 253)
0 0 0 1 1 Sectors (252 to 255) Sectors (0 to 251)
0 0 1 0 0 Sectors (248 to 255) Sectors (0 to 247)
0 0 1 0 1 Sectors (240 to 255) Sectors (0 to 239)
continued...
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Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 1 1 0 Sectors (224 to 255) Sectors (0 to 223)
0 0 1 1 1 Sectors (192 to 255) Sectors (0 to 191)
0 1 0 0 0 Sectors (128 to 255) Sectors (0 to 127)
0 1 0 0 1 All sectors None
0 1 0 1 0 All sectors None
0 1 0 1 1 All sectors None
0 1 1 0 0 All sectors None
0 1 1 0 1 All sectors None
0 1 1 1 0 All sectors None
0 1 1 1 1 All sectors None
1.6.1.1.8. Block Protection Bits in EPCQ128 when TB Bit is Set to 1
Table 22. Block Protection Bits in EPCQ128 when TB Bit is Set to 1
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 0 0 0 0 None All sectors
1 0 0 0 1 Sector 0 Sectors (1 to 255)
1 0 0 1 0 Sectors (0 to 1) Sectors (2 to 255)
1 0 0 1 1 Sectors (0 to 3) Sectors (4 to 255)
1 0 1 0 0 Sectors (0 to 7) Sectors (8 to 255)
1 0 1 0 1 Sectors (0 to 15) Sectors (16 to 255)
1 0 1 1 0 Sectors (0 to 31) Sectors (32 to 255)
1 0 1 1 1 Sectors (0 to 63) Sectors (64 to 255)
1 1 0 0 0 Sectors (0 to 127) Sectors (128 to 255)
1 1 0 0 1 All sectors None
1 1 0 1 0 All sectors None
1 1 0 1 1 All sectors None
1 1 1 0 0 All sectors None
1 1 1 0 1 All sectors None
1 1 1 1 0 All sectors None
1 1 1 1 1 All sectors None
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1.6.1.1.9. Block Protection Bits in EPCQ256 when TB Bit is Set to 0
Table 23. Block Protection Bits in EPCQ256 when TB Bit is Set to 0
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 0 0 None All sectors
0 0 0 0 1 Sector 511 Sectors (0 to 510)
0 0 0 1 0 Sectors (510 to 511) Sectors (0 to 509)
0 0 0 1 1 Sectors (508 to 511) Sectors (0 to 507)
0 0 1 0 0 Sectors (504 to 511) Sectors (0 to 503)
0 0 1 0 1 Sectors (496 to 511) Sectors (0 to 495)
0 0 1 1 0 Sectors (480 to 511) Sectors (0 to 479)
0 0 1 1 1 Sectors (448 to 511) Sectors (0 to 447)
0 1 0 0 0 Sectors (384 to 511) Sectors (0 to 383)
0 1 0 0 1 Sectors (256 to 511) Sectors (0 to 255)
0 1 0 1 0 All sectors None
0 1 0 1 1 All sectors None
0 1 1 0 0 All sectors None
0 1 1 0 1 All sectors None
0 1 1 1 0 All sectors None
0 1 1 1 1 All sectors None
1.6.1.1.10. Block Protection Bits in EPCQ256 when TB Bit is Set to 1
Table 24. Block Protection Bits in EPCQ256 when TB Bit is Set to 1
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 0 0 0 0 None All sectors
1 0 0 0 1 Sector 0 Sectors (1 to 511)
1 0 0 1 0 Sectors (0 to 1) Sectors (2 to 511)
1 0 0 1 1 Sectors (0 to 3) Sectors (4 to 511)
1 0 1 0 0 Sectors (0 to 7) Sectors (8 to 511)
1 0 1 0 1 Sectors (0 to 15) Sectors (16 to 511)
1 0 1 1 0 Sectors (0 to 31) Sectors (32 to 511)
1 0 1 1 1 Sectors (0 to 63) Sectors (64 to 511)
1 1 0 0 0 Sectors (0 to 127) Sectors (128 to 511)
1 1 0 0 1 Sectors (0 to 255) Sectors (256 to 511)
1 1 0 1 0 All sectors None
1 1 0 1 1 All sectors None
continued...
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Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 1 1 0 0 All sectors None
1 1 1 0 1 All sectors None
1 1 1 1 0 All sectors None
1 1 1 1 1 All sectors None
1.6.1.1.11. Block Protection Bits in EPCQ512/A when TB is Set to 0
Table 25. Block Protection Bits in EPCQ512/A when TB Bit is Set to 0
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
0 0 0 0 0 None All sectors
0 0 0 0 1 Sector 1023 Sectors (0 to 1022)
0 0 0 1 0 Sectors (1022 to 1023) Sectors (0 to 1021)
0 0 0 1 1 Sectors (1020 to 1023) Sectors (0 to 1019)
0 0 1 0 0 Sectors (1016 to 1023) Sectors (0 to 1015)
0 0 1 0 1 Sectors (1008 to 1023) Sectors (0 to 1007)
0 0 1 1 0 Sectors (992 to 1023) Sectors (0 to 991)
0 0 1 1 1 Sectors (960 to 1023) Sectors (0 to 959)
0 1 0 0 0 Sectors (896 to 1023) Sectors (0 to 895)
0 1 0 0 1 Sectors (768 to 1023) Sectors (0 to 767)
0 1 0 1 0 Sectors (512 to 1023) Sectors (0 to 511)
0 1 0 1 1 All sectors None
0 1 1 0 0 All sectors None
0 1 1 0 1 All sectors None
0 1 1 1 0 All sectors None
0 1 1 1 1 All sectors None
1.6.1.1.12. Block Protection Bits in EPCQ512/A when TB is Set to 1
Table 26. Block Protection Bits in EPCQ512/A when TB Bit is Set to 1
Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 0 0 0 0 None All sectors
1 0 0 0 1 Sector 0 Sectors (1 to 1023)
1 0 0 1 0 Sectors (0 to 1) Sectors (2 to 1023)
1 0 0 1 1 Sectors (0 to 3) Sectors (4 to 1023)
1 0 1 0 0 Sectors (0 to 7) Sectors (8 to 1023)
continued...
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Status Register Content Memory Content
TB Bit BP3 Bit BP2 Bit BP1 Bit BP0 Bit Protected Area Unprotected Area
1 0 1 0 1 Sectors (0 to 15) Sectors (16 to 1023)
1 0 1 1 0 Sectors (0 to 31) Sectors (32 to 1023)
1 0 1 1 1 Sectors (0 to 63) Sectors (64 to 1023)
1 1 0 0 0 Sectors (0 to 127) Sectors (128 to 1023)
1 1 0 0 1 Sectors (0 to 255) Sectors (256 to 1023)
1 1 0 1 0 Sectors (0 to 511) Sectors (512 to 1023)
1 1 0 1 1 All sectors None
1 1 1 0 0 All sectors None
1 1 1 0 1 All sectors None
1 1 1 1 0 All sectors None
1 1 1 1 1 All sectors None
1.6.1.2. Write Status Register Operation (01h)
The write status operation does not affect the write enable latch and write in progress
bits. You can use the write status operation to set the status register block protection
and top or bottom bits. Therefore, you can implement this operation to protect certain
memory sectors. After setting the block protect bits, the protected memory sectors
are treated as read-only memory. You must execute the write enable operation before
the write status operation.
Figure 2. Write Status Operation Timing Diagram
Operation Code (01h) Status Register
DATA0
nCS
DCLK
DATA High Impedance
012345678 9 10 11 12 13 14 15
0
1
2
3
4
5
6
7
MSB
Immediately after the nCS signal drives high, the device initiates the self-timed write
status cycle. The self-timed write status cycle usually takes 5 ms for all EPCQ devices
and is guaranteed to be less than 8 ms. For details about tWS, refer to the related
information below. You must account for this delay to ensure that the status register is
written with the desired block protect bits. Alternatively, you can check the write in
progress bit in the status register by executing the read status operation while the
self-timed write status cycle is in progress. Set the write in progress bit to 1 during
the self-timed write status cycle and 0 when it is complete.
Related Information
Write Operation Timing on page 40
The Write Operation Parameters provides more information about tWS, tES and tWB.
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1.6.2. Flag Status Register
Table 27. Flag Status Register Bits
Bit Name Value Description
7 Write or Erase
Controller(11)
1=Ready
0=Busy
Indicates whether one of the following operation is in
progress:
Write Status Register
Write NVCR
Write Bytes
Erase
6 Erase suspend 1=In effect
0=Not in effect
Indicates whether an Erase operation has been or is going
to be suspended.
Note: Status bits are reset automatically
5 Erase 1=Failure or protection
error
0=Clear
Indicates whether an Erase operation has succeeded or
failed.
4 Write 1=Failure or protection
error
0=Clear
Indicates whether a Write Bytes operation has succeeded or
failed; also an attempt to write a 0 to a 1 when VPP = VPPH
and the data pattern is a multiple of 64 bits.
3 Reserved
2 Write suspend 1=In effect
0=Not in effect
Indicates whether a Write Bytes operation has been or will
be suspended.
1 Protection 1=Failure or protection
error
0=Clear
Indicates whether an Erase or Write Bytes operation has
attempted to modify the protected array sector.
0 Addressing 1=4-bytes addressing
0=3-bytes addressing
Indicates the addressing mode used.
1.6.2.1. Read Flag Status Register Operation(70h)
The Read flag status register can be read continuously and at any time, including
during a write or erase operation. You must read the Read flag status register every
time a write or erase command is issued.
Figure 3. Read Flag Status Register Operation Timing Diagram
nCS
DCLK
DATA0
DATA
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
7 6 5 4 3 2 1 0 7 2 1 0 76 5 4 3
Operation Code (70h)
MSB MSB
Status Register Out Status Register Out
High Impedance
(11) Write or erase controller bit = NOT write in progress bit.
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1.6.3. Non-Volatile Configuration Register
Table 28. Dummy Clock Cycles and Address Bytes for the Non-Volatile Configuration
Register Operation
FPGA Device Dummy Clock Cycles
AS x1 AS x4
Arria® GX
Arria II
Cyclone®
Cyclone II
Cyclone III
Cyclone IV
Stratix®
Stratix GX
Stratix II
Stratix II GX
Stratix III
Stratix IV
Intel Cyclone 10 LP
8
Table 29. Dummy Clock Cycles and Address Bytes for the Non-Volatile Configuration
Register Operation for Arria V, Cyclone V and Stratix V Devices
FPGA Device Address Bytes(12) Dummy Clock Cycles
AS x1 AS x4
Arria V
Cyclone V
Stratix V
3-byte addressing 12 12
4-byte addressing 4 10
Table 30. Non-Volatile Configuration Register Operation Bit Definition
Bit Description Default Value
15:12 Number of dummy clock cycles. When this number is from 0001 to 1110, the
dummy clock cycles is from 1 to 14. 0000 or 1111 (13)
11:5 Set these bits to 1111111.1111111
4 Don't care. 1
3:1 Set these bits to 111.111
0 Address byte setting.
0—4-byte addressing
1—3-byte addressing
1
(12) The 4-byte addressing mode is used for EPCQ256 and EPCQ512/A devices.
(13) The default dummy clock cycles is 10 for extended quad input fast read and 8 for extended
dual input fast and standard fast read.
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1.6.3.1. Read Non-Volatile Configuration Register Operation (B5h)
To execute a read non-volatile configuration register, drive the nCS low. For extended
SPI protocol, the operation code is input on DATA0, and output on DATA1. You can
terminate the operation by driving the nCS low at any time during data output. The
nonvolatile configuration register can be read continuously. After all 16 bits of the
register have been read, a 0 is output.
Figure 4. Read Non-Volatile Configuration Register Operation Timing Diagram
7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Operation Code (B5h)
High Impedance NVCR Out NVCR Out
LS Byte MS Byte
nCS
DCLK
DATA0
DATA
1.6.3.2. Write Non-Volatile Configuration Register Operation (B1h)
You need to write the non-volatile configuration registers for EPCQ devices for
different configuration schemes. If you are using the .jic file, the Intel Quartus Prime
programmer sets the number of dummy clock cycles and address bytes accordingly. If
you are using an external programmer tools, you must set the non-volatile
configuration registers.
To set the non-volatile configuration register, follow these steps:
1. Execute the write enable operation.
2. Execute the write non-volatile configuration register operation.
3. Set the 16-bit register value.
Set the 16-bit register value as b'1110 111y xxxx 1111 where y is the address
byte (0 for 4-byte addressing and 1 for 3-byte addressing) and xxxx is the dummy
clock value. When the xxxx value is from 0001 to 1110, the dummy clock value is
from 1 to 14. When xxxx is 0000 or 1111, the dummy clock value is at the default
value, which is 8 for standard fast read (AS x1) mode and 10 for extended quad input
fast read (AS x4 mode).
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Figure 5. Write Non-Volatile Configuration Register Operation Timing Diagram
7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
nCS
DCLK
DATA0
DATA
Operation Code
(B1h)
High Impedance
Byte Byte
LS Byte MS Byte
NVCR In
1.7. Summary of Operation Codes
Table 31. Summary of Operation Codes
Operation Operation Code(14) Address Bytes Dummy Clock
Cycles
Data Bytes DCLK fMAX
(MHz)
Read status register 05h 0 0 1 to infinite(15)100
Read flag status register 70h 0 0 1 to infinite 100
Read bytes 03h 3 or 4 0 1 to infinite(15)50
Read non-volatile
configuration register B5h 0 0 2 100
Read device identification 9Fh 0 2 1 100
Fast read 0Bh 3 or 4 8(16)1 to infinite(15)100
Extended dual input fast
read BBh 3 or 4 8(16)1 to infinite(15)100
Extended quad input fast
read EBh 3 or 4 10(16)1 to infinite(15)100
Write enable 06h 0 0 0 100
Write disable 04h 0 0 0 100
Write status 01h 0 0 1 100
Write bytes 02h 3 or 4 0 1 to 256(17)100
Write non-volatile
configuration register B1h 0 0 2 100
continued...
(14) List MSB first and LSB last.
(15) The status register or data, is read out at least once and is continuously read out until the nCS
pin is driven high.
(16) You can configure the number of dummy clock cycles. Refer to Non-Volatile Configuration
Register on page 27 for more information.
(17) A write bytes operation requires at least one data byte. If more than 256 bytes are sent to the
device, only the last 256 bytes are written to the memory.
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Operation Operation Code(14) Address Bytes Dummy Clock
Cycles
Data Bytes DCLK fMAX
(MHz)
Extended dual input fast
write bytes D2h 3 or 4 0 1 to 256(17)100
Extended quad input fast
write bytes for EPCQ16,
EPCQ32, EPCQ64,
EPCQ128 and EPCQ256
devices
12h 3 or 4 0 1 to 256(17)100
Extended quad input fast
write bytes for
EPCQ512/A devices
38h 3 or 4 0 1 to 256(17)100
Erase bulk C7h 0 0 0 100
Erase sector D8h 3 or 4 0 0 100
Erase subsector 20h 3 0 0 100
4BYTEADDREN(18)B7h 0 0 0 100
4BYTEADDREX(18)E9h 0 0 0 100
1.7.1. 4BYTEADDREN and 4BYTEADDREX Operations (B7h and E9h)
To enable 4BYTEADDREN or 4BYTEADDREX operations, you can select the device by
driving the nCS signal low, followed by shifting in the operation code through DATA0.
Note: You must execute a write enable operation before you can enable the 4BYTEADDREN
or 4BYTEADDREX operation.
Figure 6. 4BYTEADDREN Timing Diagram
2
0
Operation Code (B7h)
nCS
DCLK
DATA0
3 4 5 6 71
(14) List MSB first and LSB last.
(18) This operation is applicable for EPCQ256 and EPCQ512/A devices only.
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Figure 7. 4BYTEADDREX Timing Diagram
Operation Code (E9h)
3 4 5 6 710 2
nCS
DCLK
DATA0
Related Information
Write Enable Operation (06h) on page 31
1.7.2. Write Enable Operation (06h)
When you enable the write enable operation, the write enable latch bit is set to 1 in
the status register. You must execute this operation before the write bytes, write
status, erase bulk, erase sector, extended dual input fast write bytes, extended quad
input fast write bytes, 4BYTEADDREN, and 4BYTEADDREX operations.
Figure 8. Write Enable Operation Timing Diagram
nCS
DCLK
DATA0
DATA[3:1]
Operation Code (06h)
High Impedance
0 1 2 3 4 5 6 7
1.7.3. Write Disable Operation (04h)
The write disable operation resets the write enable latch bit in the status register. To
prevent the memory from being written unintentionally, the write enable latch bit is
automatically reset when implementing the write disable operation, and under the
following conditions:
Power up
Write bytes operation completion
Write status operation completion
Erase bulk operation completion
Erase sector operation completion
Extended dual input fast write bytes operation completion
Extended quad input fast write bytes operation completion
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Figure 9. Write Disable Operation Timing Diagram
Operation Code (04h)
DATA0
nCS
DCLK
DATA[3:1] High Impedance
01234567
1.7.4. Read Bytes Operation (03h)
When you execute the read bytes operation, you first shift in the read bytes operation
code, followed by a 3-byte addressing mode (A[23..0]) or a 4-byte addressing mode
(A[31..0]). Each address bit must be latched in on the rising edge of the DCLK
signal. After the address is latched in, the memory contents of the specified address
are shifted out serially on the DATA1 pin, beginning with the MSB. For reading Raw
Programming Data File (.rpd), the content is shifted out serially beginning with the
LSB. Each data bit is shifted out on the falling edge of the DCLK signal. The maximum
DCLK frequency during the read bytes operation is 50 MHz.
Figure 10. Read Bytes Operation Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
The first byte address can be at any location. The device automatically increases the
address to the next higher address after shifting out each byte of data. Therefore, the
device can read the whole memory with a single read bytes operation. When the
device reaches the highest address, the address counter restarts at 0x000000,
allowing the memory contents to be read out indefinitely until the read bytes
operation is terminated by driving the nCS signal high. If the read bytes operation is
shifted in while a write or erase cycle is in progress, the operation is not executed and
does not affect the write or erase cycle in progress.
Related Information
Write Operation Timing on page 40
The Write Operation Parameters provides more information about tWS, tES and tWB.
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1.7.5. Fast Read Operation (0Bh)
When you execute the fast read operation, you first shift in the fast read operation
code, followed by a 3-byte addressing mode (A[23..0]) or a 4-byte addressing
mode (A[31..0]), and dummy clock cycle(s) with each bit being latched-in during
the rising edge of the DCLK signal. Then, the memory contents at that address is
shifted out on DATA1 with each bit being shifted out at a maximum frequency of
100 MHz during the falling edge of the DCLK signal.
Figure 11. Fast Read Operation Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
nCS
DCLK
DATA0
DATA1
nCS
DCLK
DATA0
DATA1
0 1 2 3 4 5 6 7 8 9 10 28 29 30 31
Operation Code (0Bh)
8 Dummy Clock Cycles
24-Bit Address
MSB
MSB MSB MSB
High Impedance
23 22 21 3 2 1 0
Byte1 Byte 2
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7
7 6 5 4 3 2 1 0
The first byte address can be at any location. The device automatically increases the
address to the next higher address after shifting out each byte of data. Therefore, the
device can read the whole memory with a single fast read operation. When the device
reaches the highest address, the address counter restarts at 0x000000, allowing the
read sequence to continue indefinitely.
You can terminate the fast read operation by driving the nCS signal high at any time
during data output. If the fast read operation is shifted in while an erase, program, or
write cycle is in progress, the operation is not executed and does not affect the erase,
program, or write cycle in progress.
1.7.6. Extended Dual Input Fast Read Operation (BBh)
This operation is similar to the fast read operation except that the data and addresses
are shifted in and out on the DATA0 and DATA1 pins.
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Figure 12. Extended Dual Input Fast Read Operation Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
22 20 18 16 14 12 10 8 6 4 2 0
23 21 19 17 15 13 11 9 7 5 3 1
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7
2827 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Operation Code (BBh)
Dummy Clock Cycles
Byte 1 Byte 2 Byte 3 Byte 4
nCS
DCLK
DATA0
DATA1
nCS
DCLK
DATA0
DATA1
24-Bit Address
I/O switches from Input to Output
1.7.7. Extended Quad Input Fast Read Operation (EBh)
This operation is similar to the extended dual input fast read operation except that the
data and addresses are shifted in and out on the DATA0, DATA1, DATA2, and DATA3
pins.
Figure 13. Extended Quad Input Fast Read Operation
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
211 12 13 14
0
DATA0
DCLK
Operating Code (EBh)
15 16 20
17 18 19
4 0
20 16 12 8 4
22
21 23
5 1
21 17 13 9
DATA1 High Impedance
Byte 1
5
7
7 3
23 19 15 11
6
6 2
22 18 14 10
DATA2 High Impedance
High Impedance
Byte 2
6 Dummy Clock Cycles
24 Bit Address
DATA3
I/O Switches from Input to Output
1 3 64 5710
89
4040
5151
6262
7373
nCS
1.7.8. Read Device Identification Operation (9Fh)
This operation reads the 8-bit device identification of the EPCQ device from the DATA1
output pin. If this operation is shifted in while an erase or write cycle is in progress,
the operation is not executed and does not affect the erase or write cycle in progress.
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Table 32. EPCQ Device Identification
EPCQ Device Silicon ID (Binary Value)
EPCQ16 b'0001 0101
EPCQ32 b'0001 0110
EPCQ64 b'0001 0111
EPCQ128 b'0001 1000
EPCQ256 b'0001 1001
EPCQ512/A b'0010 0000
The 8-bit device identification of the EPCQ device is shifted out on the DATA1 pin on
the falling edge of the DCLK signal.
Figure 14. Read Device Identification Operation Timing Diagram
nCS
DCLK
DATA0
DATA1
0 1 2 3 4 5 6 7 8 9 10 20 21 23 24 25 26 27 28 29 30 31 32
Operation Code (9Fh) Two Dummy Bytes
15 14 13 3 2 1 0
7 6 5 4 3 2 1 0
MSB
MSB
High Impedance
Device ID
Don’t Care
1.7.9. Write Bytes Operation (02h)
This operation allows bytes to be written to the memory. You must execute the write
enable operation before the write bytes operation. After the write bytes operation is
completed, the write enable latch bit in the status register is set to 0.
When you execute the write bytes operation, you shift in the write bytes operation
code, followed by a 3-byte addressing mode (A[23..0]) or a 4-byte addressing mode
(A[31..0]), and at least one data byte on the DATA0 pin. If the eight LSBs
(A[7..0]) are not all 0, all sent data that goes beyond the end of the current page is
not written into the next page. Instead, this data is written at the start address of the
same page. You must ensure the nCS signal is set low during the entire write bytes
operation.
Figure 15. Write Bytes Operation Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
DATA0
Operation Code (02h) 24-Bit Address Data Byte 1 Data Byte 2 Data Byte 256
012345678910 28 29 30 31 32
nCS
DCLK
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 023 22 21 7 6 5 4 3 2 1 0
2072 2073 2074 2075 2076 2077 2078 2079
MSB MSB MSB MSB
If more than 256 data bytes are shifted into the EPCQ device with a write bytes
operation, the previously latched data is discarded and the last 256 bytes are written
to the page. However, if less than 256 data bytes are shifted into the EPCQ device,
they are guaranteed to be written at the specified addresses and the other bytes of
the same page are not affected.
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The device initiates a self-timed write cycle immediately after the nCS signal is driven
high. For details about the self-timed write cycle time, refer to tWB in the related
information below. You must account for this amount of delay before another page of
memory is written. Alternatively, you can check the write in progress bit in the status
register by executing the read status operation while the self-timed write cycle is in
progress. The write in progress bit is set to 1 during the self-timed write cycle and 0
when it is complete.
Note: You must erase all the memory bytes of EPCQ devices before you implement the write
bytes operation. You can erase all the memory bytes by executing the erase sector
operation in a sector or the erase bulk operation throughout the entire memory
1.7.10. Extended Dual Input Fast Write Bytes Operation (D2h)
This operation is similar to the write bytes operation except that the data and
addresses are shifted in on the DATA0 and DATA1 pins.
Figure 16. Extended Dual Input Fast Write Bytes Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
21 3 9 10 11 12 13 14
0
14 12 10 8
DCLK
DATA0
nCS
DATA1
Operation Code (D2h)
DCLK
DATA0
nCS
DATA1
33
21 22 23 24 25 26 27 28 29 30 31 32
1 7 5 1
37 5 1
0
4 02
15 16 17 18 19 20
23 21 19 17 15 13 11 9 7 1
22 20 18 16 6 0
24-bit Address
34
MSB
35
0
7
1
MSB
MSB
MSB
Data In 4
Data In 1 Data In 3
Data In 2
6 4 02
1
MSB
Data In 256
18 19 20
24
5 3
4 5 67 8
53
7 5 33
6 4 2
6 4 2
6 4 2 06
7 5 3
1.7.11. Extended Quad Input Fast Write Bytes Operation (12h or 38h)
This operation is similar to the extended dual input fast write bytes operation except
that the data and addresses are shifted in on the DATA0, DATA1, DATA2, and DATA3
pins.
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Figure 17. Extended Quad Input Fast Write Bytes Operation Timing Diagram for EPCQ16,
EPCQ32, EPCQ64, EPCQ128 and EPCQ256
To access the entire EPCQ256 memory, use 4-byte addressing mode. In the 4-byte addressing mode, the
address width is 32-bit address.
DATA0
nCS
DATA1
Operation Code (12h)
Don’t Care
MSB
DATA3
DATA2 Don’t Care
‘1’
Data In
21 3 9 100
DCLK
2017 18 19
11 12 13 14 15 16 22
21 23 25
24 26
MSB
MSBMSB MSB
MSB
24-bit Address Data In Data In
2
1 3 4 56
27
20 16 12 80 4
4 0 4040404 40
0 4 0
2 6
6 2 6262626 62
2 6 2
1 5
5 1 5151515 51
1 5 1
21 17 13 9
22 18 14 10
23 19 15 3 7
7 3 7373737 73
3 7 3
11
7
MSB
465 7 8
Figure 18. Extended Quad Input Fast Write Bytes Operation Timing Diagram for
EPCQ512/A Devices
To access the entire EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing mode, the
address width is 32-bit address.
DATA0
nCS
DATA1
Operation Code (38h)
Don’t Care
MSB
DATA3
DATA2 Don’t Care
‘1’
Data In
21 3 9 100
DCLK
2017 18 19
11 12 13 14 15 16 22
21 23 25
24 26
MSB
MSBMSB MSB
MSB
24-bit Address Data In Data In
2
1 3 4 56
27
20 16 12 80 4
4 0 4040404 40
0 4 0
2 6
6 2 6262626 62
2 6 2
1 5
5 1 5151515 51
1 5 1
21 17 13 9
22 18 14 10
23 19 15 3 7
7 3 7373737 73
3 7 3
11
7
MSB
465 7 8
1.7.12. Erase Bulk Operation (C7h)
This operation sets all the memory bits to 1or 0xFF. Similar to the write bytes
operation, you must execute the write enable operation before the erase bulk
operation.
You can implement the erase bulk operation by driving the nCS signal low and then
shifting in the erase bulk operation code on the DATA0 pin. The nCS signal must be
driven high after the eighth bit of the erase bulk operation code has been latched in.
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Figure 19. Erase Bulk Operation Timing Diagram
Operation Code (C7h)
DATA0
nCS
DCLK
0 1 23 4 56 7
The device initiates a self-timed erase bulk cycle immediately after the nCS signal is
driven high. For details about the self-timed erase bulk cycle time, refer to tEB in the
related information below.
You must account for this delay before accessing the memory contents. Alternatively,
you can check the write in progress bit in the status register by executing the read
status operation while the self-timed erase cycle is in progress. The write in progress
bit is set to 1 during the self-timed erase cycle and 0 when it is complete. The write
enable latch bit in the status register is reset to 0 before the erase cycle is complete.
Related Information
Write Operation Timing on page 40
The Write Operation Parameters provides more information about tWS, tES and tWB.
1.7.13. Erase Sector Operation (D8h)
The erase sector operation allows you to erase a certain sector in the EPCQ device by
setting all the bits inside the sector to 1 or 0xFF. This operation is useful if you want
to access the unused sectors as a general purpose memory in your applications. You
must execute the write enable operation before the erase sector operation.
When you execute the erase sector operation, you must first shift in the erase sector
operation code, followed by the 3-byte addressing mode (A[23..0]) or the 4-byte
addressing mode (A[31..0]) of the chosen sector on the DATA0 pin. The 3-byte
addressing mode or the 4-byte addressing mode for the erase sector operation can be
any address inside the specified sector. Drive the nCS signal high after the eighth bit
of the erase sector operation code has been latched in.
Figure 20. Erase Sector Operation Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
DATA0
Operation Code (D8h) 24-Bit Address
nCS
DCLK
0 1 2 3 4 5 6 7 8 9 28 29 30 31
3 2 1 023 22
MSB
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The device initiates a self-timed erase sector cycle immediately after the nCS signal is
driven high. For details about the self-timed erase sector cycle time, refer to tES in the
related information below. You must account for this amount of delay before another
page of memory is written. Alternatively, you can check the write in progress bit in the
status register by executing the read status operation while the self-timed erase cycle
is in progress. The write in progress bit is set to 1 during the self-timed erase cycle
and 0 when it is complete. The write enable latch bit in the status register is set to 0
before the self-timed erase cycle is complete.
Related Information
Write Operation Timing on page 40
The Write Operation Parameters provides more information about tWS, tES and tWB.
1.7.14. Erase Subsector Operation
The erase subsector operation allows you to erase a certain subsector in the EPCQ
device by setting all the bits inside the subsector to 1 or 0xFF. This operation is useful
if you want to access the unused subsectors as a general purpose memory in your
applications. You must execute the write enable operation before the erase subsector
operation.
When you execute the erase subsector operation, you must first shift in the erase
subsector operation code, followed by the 3-byte addressing mode (A[23..0]) or the
4-byte addressing mode (A[31..0]) of the chosen subsector on the DATA0 pin. The
3-byte addressing mode or the 4-byte addressing mode for the erase subsector
operation can be any address inside the specified subsector. For details about the
subsector address range, refer to the related information below. Drive the nCS signal
high after the eighth bit of the erase subsector operation code has been latched in.
Figure 21. Erase Subsector Operation Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
DATA0
Operation Code (20h) 24-Bit Address
nCS
DCLK
0 1 2 3 4 5 6 7 8 9 28 29 30 31
3 2 1 023 22
MSB
The device initiates a self-timed erase subsector cycle immediately after the nCS
signal is driven high. For details about the self-timed erase subsector cycle time, refer
to related the information below. You must account for this amount of delay before
another page of memory is written. Alternatively, you can check the write in progress
bit in the status register by executing the read status operation while the self-timed
erase cycle is in progress. The write in progress bit is set to 1 during the self-timed
erase cycle and 0 when it is complete. The write enable latch bit in the status register
is set to 0 before the self-timed erase cycle is complete.
Related Information
Write Operation Timing on page 40
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Memory Array Organization on page 7
1.8. Power Mode
EPCQ devices support active and standby power modes. When the nCS signal is low,
the device is enabled and is in active power mode. The FPGA is configured while the
EPCQ device is in active power mode. When the nCS signal is high, the device is
disabled but remains in active power mode until all internal cycles are completed, such
as write or erase operations. The EPCQ device then goes into standby power mode.
The ICC1 and ICC0 parameters list the VCC supply current when the device is in active
and standby power modes.
1.9. Timing Information
Note: The values in the following tables are finalized for EPCQ16, EPCQ32, EPCQ64,
EPCQ128, EPCQ256, and EPCQ512/A devices.
Related Information
Summary of Operation Codes on page 29
1.9.1. Write Operation Timing
Figure 22. Write Operation Timing Diagram
DATA0
nCS
DCLK
DATA
tNCSH tNCSSU
tDSU tDH
tCL tCH
tCSH
Bit n Bit n - 1 Bit 0
High Impedance
Table 33. Write Operation Parameters
Symbol Parameter Min Typical Max Unit
fWCLK Write clock frequency (from the FPGA,
download cable, or embedded processor) for
write enable, write disable, read status, read
device identification, write bytes, erase bulk,
and erase sector operations for all devices
except EPCQ512/A
108 MHz
Write clock frequency (from the FPGA,
download cable, or embedded processor) for
write enable, write disable, read status, read
device identification, write bytes, erase bulk,
and erase sector operations for EPCQ512/A
133 MHz
tCH (19)DCLK high time for all devices except
EPCQ512/A
4 ns
continued...
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Symbol Parameter Min Typical Max Unit
DCLK high time for EPCQ512/A 3.375 ns
tCL(19)DCLK low time for all devices except
EPCQ512/A
4 ns
DCLK low time for EPCQ512/A 3.375 ns
tNCSSU Chip select (nCS) setup time for all devices
except EPCQ512/A
4 ns
DCLK low time for EPCQ512/A 3.375 ns
tNCSH Chip select (nCS) hold time for all devices
except EPCQ512/A
4 ns
Chip select (nCS) hold time for EPCQ512/A 3.375 ns
tDSU DATA[] in setup time before the rising edge on
DCLK for all devices except EPCQ512/A
2 ns
DATA[] in setup time before the rising edge on
DCLK for EPCQ512/A
1.75 ns
tDH DATA[] hold time after the rising edge on
DCLK for all devices except EPCQ512/A
3 ns
DATA[] hold time after the rising edge on
DCLK for EPCQ512/A
2.5 ns
tCSH Chip select (nCS) high time 50 ns
tWB(20)Write bytes cycle time 0.6 5 ms
tWS(20)Write status cycle time 1.3 8 ms
tEB(20)Erase bulk cycle time for EPCQ16 30 60 s
Erase bulk cycle time for EPCQ32 30 60
Erase bulk cycle time for EPCQ64 60 250
Erase bulk cycle time for EPCQ128 170 250
Erase bulk cycle time for EPCQ256 240 480
Erase bulk cycle time for EPCQ512/A 153 460
tES(20)Erase sector cycle time for all devices except
EPCQ512/A
0.7 3 s
Erase sector cycle time for EPCQ512/A 0.15 1
tESS (20)Erase subsector cycle time for all devices
except EPCQ512/A
0.3 1.5 s
Erase subsector cycle time for EPCQ512/A 0.05 0.4
(19) The value must be larger /than or equal to 1/f WCLK.
(20) The Write Operation Timing Diagram does not show these parameters.
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1.9.2. Read Operation Timing
Figure 23. Read Operation Timing Diagram
DATA0
nCS
DCLK
DATA
tnCLK2D
Add_Bit 0
Bit NBit N - 1 Bit 0
tCH
tCL tODIS
Table 34. Read Operation Parameters
Symbol Parameter Min Max Unit
fRCLK Read clock frequency (from the FPGA or embedded
processor) for read bytes operations
50 MHz
Fast read clock frequency (from the FPGA or
embedded processor) for fast read bytes operation
100 MHz
tCH DCLK high time 4 ns
tCL DCLK low time 4 ns
tODIS Output disable time after read 8 ns
tnCLK2D Clock falling edge to DATA 7 ns
1.10. Programming and Configuration File Support
The Intel Quartus Prime software provides programming support for EPCQ devices.
When you select an EPCQ device, the Intel Quartus Prime software automatically
generates the Programmer Object File (.pof) to program the device. The software
allows you to select the appropriate EPCQ device density that most efficiently stores
the configuration data for the selected FPGA.
You can program the EPCQ device in-system by an external microprocessor using the
SRunner software driver. The SRunner software driver is developed for embedded
EPCQ device programming that you can customize to fit in different embedded
systems. The SRunner software driver reads .rpd files and writes to the EPCQ devices.
The programming time is comparable to the Intel Quartus Prime software
programming time. Because the FPGA reads the LSB of the .rpd data first during the
configuration process, the LSB of .rpd bytes must be shifted out first during the read
bytes operation and shifted in first during the write bytes operation.
Writing and reading the .rpd file to and from the EPCQ device is different from the
other data and address bytes.
During the ISP of an EPCQ device using the Intel FPGA Download CableIntel FPGA
Download Cable II, Intel FPGA Ethernet Cable, the cable pulls the nCONFIG signal low
to reset the FPGA and overrides the 10-kΩ pull-down resistor on the nCE pin of the
FPGA. The download cable then uses the interface pins depending on the selected AS
mode to program the EPCQ device. When programming is complete, the download
cable releases the interface pins of the EPCQ device and the nCE pin of the FPGA and
pulses the nCONFIG signal to start the configuration process.
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The FPGA can program the EPCQ device in-system using the JTAG interface with the
SFL. This solution allows you to indirectly program the EPCQ device using the same
JTAG interface that is used to configure the FPGA.
Related Information
Using the Intel FPGA Serial Flash Loader IP Core with the Quartus Prime Software
Intel FPGA ASMI Parallel IP Core User Guide
Intel FPGA Download Cable II User Guide
Intel FPGA Ethernet Cable
Configuration, Design Security, and Remote System Upgrades in Arria V Devices
Configuration, Design Security, and Remote System Upgrades in Cyclone V
Devices
Configuration, Design Security, and Remote System Upgrades in Stratix V Devices
1.11. Pin Information
The following lists the control pins on the EPCQ device:
Serial data 3 (DATA3)
Serial data 2 (DATA2)
Serial data 1 (DATA1)
Serial data 0 (DATA0)
Serial clock (DCLK)
Chip select (nCS)
Related Information
Configuration, Design Security, and Remote System Upgrades in Arria V Devices
Configuration, Design Security, and Remote System Upgrades in Cyclone V
Devices
Configuration, Design Security, and Remote System Upgrades in Stratix V Devices
1.11.1. Pin-Out Diagram for EPCQ16 and EPCQ32 Devices
Figure 24. AS x1 and AS x4 Pin-Out Diagrams for EPCQ16 and EPCQ32 Devices
nCS
DATA1
VCC
GND
VCC
VCC
DCLK
DATA0
1
2
3
4
8
7
6
5
nCS
DATA1
DATA2
GND
VCC
DATA3
DCLK
DATA0
1
2
3
4
8
7
6
5
AS x1 AS x4
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1.11.2. Pin-Out Diagram for EPCQ64, EPCQ128, EPCQ256, and EPCQ512/A
Devices
Figure 25. AS x1 and AS x4 Pin-Out Diagrams for EPCQ64, EPCQ128, EPCQ256, and
EPCQ512/A Devices
VCC
VCC
N.C
N.C
N.C
nCS
DATA1
DCLK
DATA0
N.C.
N.C
N.C
N.C
GND
VCC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
N.C
DATA3
VCC
N.C
N.C
N.C
nCS
DATA1
DCLK
DATA0
N.C.
N.C
N.C
N.C
GND
DATA2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
N.C
AS x1 AS x4
Notes:
N.C pins must be left unconnected.
1.11.3. EPCQ Device Pin Description
Table 35. EPCQ Device Pin Description
Pin
Nam
e
AS x1 Pin-Out
Diagram
AS x4 Pin-Out
Diagram
Pin Type Description
Pin
Number
in 8-Pin
SOIC
Package
Pin
Number
in 16-
Pin SOIC
Package
Pin
Number
in 8-Pin
SOIC
Package
Pin
Number
in 16-
Pin SOIC
Package
DAT
A0
5 15 5 15 I/O For AS x1 mode, use this pin as an input signal pin to write
or program the EPCQ device. During write or program
operations, the data is latched on the rising edge of the
DCLK signal.
For AS x4 mode, use this pin as an I/O signal pin. During
write or program operations, this pin acts as an input pin
that serially transfers data into the EPCQ device. The data is
latched on the rising edge of the DCLK signal. During read or
configuration operations, this pin acts as an output signal pin
that serially transfers data out of the EPCQ device to the
FPGA. The data is shifted out on the falling edge of the DCLK
signal.
During the extended quad input fast write bytes or extended
dual input fast write bytes operations, this pin acts as an
input pin that serially transfers data into the EPCQ device.
The data is latched on the rising edge of the DCLK signal.
During extended dual input fast read or extended quad input
fast read operations, this pin acts as an output signal pin
continued...
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Pin
Nam
e
AS x1 Pin-Out
Diagram
AS x4 Pin-Out
Diagram
Pin Type Description
Pin
Number
in 8-Pin
SOIC
Package
Pin
Number
in 16-
Pin SOIC
Package
Pin
Number
in 8-Pin
SOIC
Package
Pin
Number
in 16-
Pin SOIC
Package
that serially transfers data out of the EPCQ device to the
FPGA. The data is shifted out on the falling edge of the DCLK
signal.
DAT
A1
2 8 2 8 I/O For AS x1 and x4 modes, use this pin as an output signal pin
that serially transfers data out of the EPCQ device to the
FPGA during read or configuration operations. The transition
of the signal is on the falling edge of the DCLK signal.
During the extended dual input fast write bytes or extended
quad input fast write bytes operation, this pin acts as an
input signal pin that serially transfers data into the EPCQ
device. The data is latched on the rising edge of the DCLK
signal.
During extended dual input fast read or extended quad input
fast read operations, this pin acts as an output signal pin
that serially transfer data out of the EPCQ device to the
FPGA. The data is shifted out on the falling edge of the DCLK
signal. During read, configuration, or program operations,
you can enable the EPCQ device by pulling the nCS signal
low.
DAT
A2
3 9 I/O For AS x1 mode, extended dual input fast write bytes
operation and extended dual input fast read operation, this
pin must connect to a 3.3-V power supply.
For AS x4 mode, use this pin as an output signal that serially
transfers data out of the EPCQ device to the FPGA during
read or configuration operations. The transition of the signal
is on the falling edge of the DCLK signal.
During the extended quad input fast write bytes operation,
this pin acts as an input pin that serially transfers data into
the EPCQ device. The data is latched on the rising edge of
the DCLK signal. During the extended quad input fast read
operation, this pin acts as an output signal pin that serially
transfers data out of the EPCQ device to the FPGA. The data
is shifted out on the falling edge of the DCLK signal.
DAT
A3
7 1 I/O For AS x1 mode, extended dual input fast write bytes
operation and extended dual input fast read operation, this
pin must connect to a 3.3-V power supply.
For AS x4 mode, use this pin as an output signal that serially
transfers data out of the EPCQ device to the FPGA during
read or configuration operations. The transition of the signal
is on the falling edge of the DCLK signal.
During the extended quad input fast write bytes operation,
this pin acts as an input pin that serially transfers data into
the EPCQ device. The data is latched on the rising edge of
the DCLK signal. During the extended quad input fast read
operation, this pin acts as an output signal pin that serially
transfers data out of the EPCQ device to the FPGA. The data
is shifted out on the falling edge of the DCLK signal.
nCS 1 7 1 7 Input The active low nCS input signal toggles at the beginning and
end of a valid operation. When this signal is high, the device
is deselected and the DATA pin is tri-stated. When this signal
is low, the device is enabled and is in active mode. After
power up, the EPCQ device requires a falling edge on the
nCS signal before you begin any operation.
continued...
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Pin
Nam
e
AS x1 Pin-Out
Diagram
AS x4 Pin-Out
Diagram
Pin Type Description
Pin
Number
in 8-Pin
SOIC
Package
Pin
Number
in 16-
Pin SOIC
Package
Pin
Number
in 8-Pin
SOIC
Package
Pin
Number
in 16-
Pin SOIC
Package
DC
LK
6 16 6 16 Input The FPGA provides the DCLK signal. This signal provides the
timing for the serial interface. The data presented on the
DATA0 pin is latched to the EPCQ device on the rising edge
of the DCLK signal. The data on the DATA pin changes after
the falling edge of the DCLK signal and is latched in to the
FPGA on the next falling edge of the DCLK signal.
VCC 8 2 8 2 Power Connect the power pins to a 3.3-V power supply.
GN
D
4 10 4 10 Ground Ground pin.
1.12. Device Package and Ordering Code
Related Information
Packaging Specifications and Dimensions
1.12.1. Package
The EPCQ16 and EPCQ32 devices are available in 8-pin SOIC packages. The EPCQ64,
EPCQ128, EPCQ256, and EPCQ512/A devices are available in 16-pin SOIC packages.
For a 16-pin SOIC package, you can migrate vertically from EPCQ64 device to
EPCQ128, EPCQ256, or EPCQ512/A device. You can also migrate EPCQ128 device to
EPCQ256 or EPCQ512/A device, and EPCQ256 device to EPCQ512/A device.
1.12.2. Ordering Code
Table 36. EPCQ Device Ordering Codes
Device Ordering Code(21)
EPCQ16 EPCQ16SI8N
EPCQ32 EPCQ32SI8N
EPCQ64 EPCQ64SI16N
EPCQ128 EPCQ128SI16N
EPCQ256 EPCQ256SI16N
EPCQ512/A EPCQ512ASI16N
(21) N indicates that the device is lead free.
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1.13. Document Revision History for Quad-Serial Configuration
(EPCQ) Devices Datasheet
Document
Version
Changes
2018.06.01 Updated the description for tDSU parameter.
Added data retention feature information.
Added information about the read flag status register operation.
Added a note to Absolute Maximum Ratings to state the maximum undershoot and overshoot for VI.
Updated the product obsolescence note in Supported Intel EPCQ Devices table.
Added a link to PDN1802.
Date Version Changes
November 2017 2017.11.06 Updated operation code from binary to hexadecimal
value in Summary of Operation Codes table.
Added operation code in hex value in each operation
timing diagrams.
Updated operation timing diagrams to improve operation
code and DLCK alignment accuracy.
Added Registers section and included read status, write
status, read non-volatile configuration, and read non-
volatile configuration registers.
Added note stating EPCQ16, EPCQ32, EPCQ64, and
EPCQ128 are scheduled for product obsolescence.
Added Extended Quad Input Fast Write Bytes Operation
Timing Diagram for EPCQ512/A figure.
Added extended quad input fast write bytes operation
code for EPCQ512/A in Summary of Operation Codes
table.
Removed ambient temperature in Absolute Maximum
Ratings.
Added note to EPCQ512/A device is shown as EPCQ512
inIntel Quartus Prime software.
Updated Write Operation Timing for EPCQ512/A devices.
Updated Recommended Operating Conditions and ICC
Supply Current for EPCQ512/A devices.
Updated capacitance is sample-tested at a 54 MHz
frequency.
May 2016 2016.05.30 Removed instances of 'Preliminary' and notes about
pending characterization.
Replaced EPCQ512 instances with EPCQ512/A.
Updated ordering code for EPCQ512/A.
Updated AS x1 and AS x4 Pin-Out Diagrams for EPCQ64,
EPCQ128, EPCQ256, and EPCQ512/A Devices figure.
Updated Power dissipation and Joint temperature in the
Absolute Maximum Ratings table.
January 2015 2015.01.23 Updated non-volatile configuration register operation
code.
Added erase subsector operation.
Added read non-volatile configuration register operation.
Updated AS x1 dummy clock cycles for non-volatile
configuration registers.
Updated the erase and program cycle to up to 100,000
cycles.
Updated write non-volatile configuration register 16-bit
register value.
continued...
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Date Version Changes
Added Non-volatile Configuration Register Operation Bit
Definition table.
Added read status operation timing diagram.
Updated EPCQ Device Pin Description table.
Added a link to the Packaging Specifications and
Dimensions page.
January 2014 2014.01.10 Added EPCQ512 device support.
Added the write non-volatile configuration register
operation.
Added a link to the ALTASMI_PARALLEL IP Core User
Guide.
Removed preliminary for EPCQ16, EPCQ32, EPCQ64,
EPCQ128, and EPCQ256 devices.
Updated block protection bits for EPCQ16, EPCQ32,
EPCQ64, EPCQ128, and EPCQ256 devices.
Updated the dummy byte term to dummy cycle.
Updated the dummy cycles for the read device
identification operation in the Operation Codes for EPCQ
Devices.
Updated the tCL and tCH parameters in the write
operation timing diagram.
Updated the Package section.
Updated the erase bulk cycle time for EPCQ16 and
EPCQ32 devices.
Updated the operating temperature in the
Recommended Operating Conditions.
July 2012 3.0 Added Table 3, Table 4, and Table 5 to include the
address range for EPCQ16, EPCQ32, and EPCQ64
devices.
Added Table 9, Table 10, Table 11, Table 12, Table 13,
and Table 14 to include the block protection bits for
EPCQ16, EPCQ32, and EPCQ64 devices.
Added Figure 5, Figure 20 and Figure 21 to include
EPCQ16 and EPCQ32 devices.
Updated the “Device Package and Ordering Code”
section.
Updated Table 1, Table 2, Table 19, Table 20, Table 27,
and Table 28 to include EPCQ16, EPCQ32, and EPCQ64
devices.
Updated the address bytes for the extended quad input
fast write bytes operation in Table 8.
Updated Figure 22 and Figure 23 to include EPCQ64
devices.
January 2012 2.0 Added Figure 2.
Updated “Read Bytes Operation” and “Fast Read
Operation” sections.
Updated Figure 1, Figure 3, Figure 4, Figure 7, and
Figure 13.
Updated Table 5, Table 11, Table 12, and Table 14.
Minor text edits.
June 2011 1.0 Initial release.
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