2N6388
NPN Darlington
Power Transistor
Features
• This device is designed for general purpose amplifier and low-speed
switching applications.
Maximum Ratings*
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current, Continuous
Peak 10
15 A
IB Base Current 250 mA
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
PD Total Device Dissipation
Derate above 25OC 65
0.52 mW
mW/OC
PD Total Device Dissipation
Derate above 25OC 2.0
0.016 mW
mW/OC
RJC Thermal Resistance, Junction to Case 1.92 OC/W
RJA Thermal Resistance, Junction to Ambient 62.5 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Breakdown Voltage (1)
(IC=200mAdc, IE=0) 80 --- Vdc
ICEO Collector Cutoff Current
(VCB=80Vdc, IE=0) --- 1.0 mAdc
ICEX Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=80Vdc, VEB(off)=1.5Vdc, TC=125
OC) ---
--- 300
3.0 uA
mA
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 5.0 mAdc
ON CHARACTERISTICS (1)
hFE DC Current Gain
(VCE=3.0Vdc, IC=5.0Adc)
(VCE=3.0Vdc, IC=10Adc) 1000
100 20000
--- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=5.0Adc, IB=0.01Adc)
(IC=10Adc, IB=0.1Adc) ---
--- 2.0
3.0 Vdc
VBE(on) Base-Emitter On Voltage
(IC=5.0Adc, VCE=3.0Vdc)
(IC=10Adc, VCE=3.0Vdc) ---
--- 2.8
4.5 Vdc
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1. BASE
PIN 2. COLLECTOR
1 2 3
PIN 3. EMITTER
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Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
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MCC
Symbol Parameter Min Max Units
DYNAMIC CHARACTERISTICS
Ccb Output Capacitance
(VCB=10Vdc, f=1.0MHz) --- 200 pF
hfe Small-Signal Current Gain
(IC=1.0Adc, VCE=5.0Vdc, f=1.0MHz) 1000 --- ---
|hfe| Small-Signal Current Gain
(IC=1.0Adc, VCE=5.0Vdc, f=1.0KHz) 20 --- ---
MCC
2N6388
80
40
20
020 40 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
60
TATC
4.0
2.0
1.0
3.0
0 60 140
TA
TC
7.0
0.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (AMPS)
t, TIME (s)µ
5.0
0.7
0.3
0.2
0.2 10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
0.07 1.0 5.0
ts
tr
0.1
1.0
3.0
0.5 2.0
td
10,000
1.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (kHz)
10 2.0 5.0 10 20 50 100 200 1000
500
300
100
5000
hFE, SMALL-SIGNAL CURRENT GAIN
20
3000
200
500
2000
1000
30
50
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
300
0.1
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 5.0 20 10010
C, CAPACITANCE (pF)
200
100
70
50
Cib
Cob
500.2 0.5
TJ = 25°C
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Revision: 2 2003/04/30
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 7. “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 4.0 V
0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0
3.0
2.5
2.0
1.5
1.0
0.5
105
Figure 8. Collector Cut–Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECTOR CURRENT (A)
µ
IC
10-1
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
103
104
+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
Figure 5. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 10
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 4.0 V
200 7.0
20,000
5000
10,000
3000
2000
1000
3.0 5.0
Figure 6. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3 0.5 1.0 2.0 3.0 5.0 7.0 30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A 6.0 A
1.0 0.7 2010
MCC
2N6388
www.mccsemi.com
Revision: 2 2003/04/30
