LY, Betorescmoines 30E Dm 7989237 OO2T8LS & TSA 1( IRF 830/FI-831/FI IRF 832/FI-833/Fl eee Oe S$ 6 S~ THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss Rosion) Ip" IRF830 500 V 1.52 45A IRF830FI 500 V 1.50 3.0A IRF831 450 V 1.50 45A {|RF831Fl 450 V 1.50 3.0 A IRF832 500 V 2.0 2 40A |RF832F1 500 V 2.0 0 25A IRF833 450 V 2.0 92 4.0A . IRF833Fl 450 V 2.02 25A HIGH VOLTAGE - 450 V FOR OFF LINE SMPS ULTRAFAST SWITCHING - FOR OPERATION AT > KHz TO-220 ISOWATT220 EASY DRIVE- FOR REDUCED COST AND SIZE COST EFFECTIVE PLASTIC PACKAGE INDUSTRIAL APPLICATIONS: SWITCHING POWER SUPPLIES INTERNAL SCHEMATIC 9 MOTOR CONTROLS DIAGRAM N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch- ing times make these POWER MOS transistors G ideal for high speed switching applications. Typi- cal uses include SMPS, lamp ballast and motor control. S ABSOLUTE MAXIMUM RATINGS IRF TO-220 830 831 832 833 ISOWATT220 830Fl 831FIl 832Fl 833Fl Vos * Drain-source voltage (Vgg = 0) 500 450 500 450 Vv Vpoer * _ Drain-gate voltage (Reg = 20 Ka) 500 450 500 450 Vv Gs Gate-source voltage +20 Vv Ipbw (*) Drain current (pulsed) 15 15 13 13 A lbum Drain inductive current, clamped (L= 100 pH) 15 15 13 13 A 830 831 832 833 lp Drain current (cont.) at T,= 25C 4.5 4.5 4 4 A Ib Drain current (cont.) at T,= 100C 3 3 2.5 2.5 A 830Fl 831Fl 832FI 833FI Ip" Drain current (cont.) at T,= 25C 3 3 2.5 2.5 A ID* Drain current (cont.) at T,= 100C 1.8 1.8 1.5 1.5 A TO-220 ISOWATT220 Prot Total dissipation at T, <25C 74 35 Ww . Derating factor 0.59 0.28 WIC Tstg Storage temperature 55 to 150 c 1 Max. operating junction temperature 150 C * T= 25C to 125C (e) Repetitive Rating: Pulse width limited by max junction temperature. = See note on ISOWATT220 on this datasheet. June 1988 1/6 331ARF 830/Fl - 831/Fl- 832/FL- 833/FL S G S-THOMSON wee ee ee JOE D MM 75925237 0025614 & T~39~11 THERMAL DATA# TO-220 | ISOWATT220 Rihj - case Thermal resistance junction-case max 1.69 | 3.57 CIW thes !hermal resistance case-sink typ 0.5 CIWW Rin-amb Thermal resistance junction-ambient max 80 CiW T Maximum lead temperature for soldering purpose 300 C ELECTRICAL CHARACTERISTICS (T,2.= 25C unless otherwise specified) Parameters Test Conditions Min. | Typ. | Max. | Unit OFF Vier) oss Drain-source Ip= 250 pA Veg= 0 breakdown voltage for IRF830/832/830FI/832FI 500 Vv for IRF831/833/831FI/833FI 450 V loss Zero gate voltage Vps= Max Rating 250 | pA drain current (Vgg=0) | Vpg= Max Rating x 0.8 T,= 125C 1000] pA less Gate-body leakage Veg= +20 V +500] nA current (Vpg = 0) ON ** Vas qin) Gate threshold voltage] Vopg= Vgg Ip= 250 pA 2 4 Vv ID(on) On-state drain current | Vpg> Ip (ony Rogion) max Vag = 10 V for IRF830/831/830F1/831FI 4.5 A for IRF832/833/832F1/833FI 4.0 A Ros (on) Static drain-source Veg= 10 V Ip= 2.5A on resistance for IRF830/831/830FI/831FI 1.5 Q for IRF832/833/832F1/833FI 2.0 | 2 DYNAMIC Sts ** Forward Vos> ID fon x Ros (on) max 2.7 mho transconductance Ip= 2.5 iss Input capacitance 800 | pF oss Output capacitance Vps= 25 V = 1 MHz 200 | pF 18s Reverse transfer Veg= 0 60 | pF capacitance SWITCHING ta(on) | Turn-on time Vpp= 225 V Ip= 2.5A 30 | ns t Rise time Rj= 15 2 30 | ns ta (ory) Turn-off delay time (see test circuit) 55 | ns t Fall time 30 | ns Qg Total Gate Charge Veg= 10 V Ip= 4.5A 32 | nc Vps= Max Rating x 0.8 (see test circuit) = See note on ISOWATT220 in this datasheet ** Pulsed: Pulse duration < 300 xs, duty cycle <2% 2/6 SGS-THOMSON 332 47. MIGRELECTREIC ESSs G S- THOMSON JOE D MM 79259237 0029815 T IRF 830/Fl - 831/Fl - 832/FI - 833/Fl T-39-1] ELECTRICAL CHARACTERISTICS (Continued) ~ Parameters Test Conditions Min. | Typ. | Max. | Unit SOURCE DRAIN DIODE Isp Source-drain current 45] A Ispy () Source-drain current 15 A (pulsed) Vsp** Forward on voltage Isp= 4.5 A Ves= 0 16) V ter Reverse recovery Tj= 150C 800 ns time Qe Reverse recovered Isp= 4.5 A di/dt = 100 Alps 4.6 ie charge ** Pulsed: Pulse duration < 300 ys, duty cycle < 1.5% () Repetive Rating: Pulse width limited by max junction temperature Safe operating areas (standard package) aan 19 10 7 a a an Output characteristics gtAl Ves=10 Tegse=25C 6 2 4 8 VostVI Thermal impedance (standard package) K jo" 10 tp{s} 10% > 10? Output characteristics lat 0 100 200 VoslVi SS SGS-THOMSON Ip Derating curve (standard package) 60 50 40 20 10 0 20 40) 60) 80100120 Tease ("Ct Transfer characteristics 4 Ty 2425C Ty 225C Ty =+55C 3/6 333Transconductance Vos>lorcna*Rostentaar. & Ila Gate charge vs gate-source voltage VgslI 20 Vog=t00V Vps=250V Vos=400 0 8 16 a 32 Qglnt} Normalized on resistance vs temperature Gy 33st (norm) Vgs = 10V * 1pe2 5A If. 1.8 -+- 10 ' a2 40 0 40 80 Ty (CY 4/6 IRF 830/E1 - 831/Fl - 832/Fl-833/FlL_ SG S-THOMSON JOE D MM 7929237 0029816 1 = T-39-11 Static drain-source on Maximum drain current vs resistance temperature Posto ta) 5 0 5 10 6 20 fA) Normalized breakdown voltage vs temperature WATT Capacitance variation CipF) (norm) 45 1600 1200 800 400 0685 0.75 0 20g rr 0 60 mw TC) Source-drain diode forward characteristics 40 0 n w 4% VeqlV 334iG S-THOMSON IRF 830/Fl - 831/Fl - 832/Fl - 833/Fl ~ 30E D Mm 7929237 0029817 3 MM 739-]]7 > Clamped inductive test circuit ~ - Glamped inductive wavetorms L VARY f, TO OBTAIN REQUIRED PEAK Vgs=t0V Vos I in _ Ey=0.5 BVpss I ween oe Fc=0.75 BVpss SC-0243 SC-0242 Switching times test circuit Gate charge test circuit 9 Yop o *Vps ADJUST Ry CURRENT PULSE R | TO OBTAIN REGULATOR GENERATOR SPECIFIED Ip : Vos 1 = _ -Vos SC-0246 CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR SC-0244 _ 5/6 335IRF 830/Fl - 831/Fl- 832/Fl-83a/Fl == & -S~ THOMSON JOE D WM 79259237 00297618 5S ISOWATT220 PACKAGE CHARACTERISTICS AND APPLICATION. ISOWATT220 is fully isolated to 2000V dc. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan- ces between the pins and heatsink. The ISOWATT220 package eliminates the need for ex- ternal isolation so reducing fixing hardware. Accu- rate moulding techniques used in manufacture assure consistent heat spreader-to-heatsink capa- citance. ISOWATT220 thermal performance is better than that of the standard part, mounted with a 0.1mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT220 packages is determined by: T; - To Rin from this Ipmax for the POWER MOS can be cal- culated: Pp lpmaxS R DS(on) (at 150C) ISOWATT DATA Safe operating areas Thermal impedance T-39-11 THERMAL IMPEDANCE OF ISOWATT220 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT220 package. The total thermal resistance Rin qoy Is the sum of each of these elements. The transient thermal impedance, Z,, for different pulse durations can be estimated as follows: 1 - for a short duration power pulse less than 1ms; Zth< Pinsc 2 - for an intermediate power puise of 5ms to 50ms: Zn= Ripc 3 - for long power pulses of the order of 500ms or greater: Zin= Rintc + Rirous + Rins-amb It is often possibile to discern these areas on tran- sient thermal impedance curves. Fig. 1 Ren-c Rnc-Hs Rens-amb WA VA VA Derating curve Gl-942Ut PiotW) = THE THA [te rt S29 0h SINGLE PULSE RRFS33F1/2F1 Rra3rl/37l to? 50 SAC or 40 Zih= KRIhy-< i! gn ! i 30 H TLL te nl {1 20 Perry + o u ti tor# 103 &7. 6/6 336 10? SGS-THOMSON PCE CELESTED MICS wo tpts) 75 100 125 TeasalCh