AAMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS ...designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 150VV High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC3264 MAXIMUM RATINGS PNP 2SA1295 17 AMPERE POWER TRANASISTOR 230 VOLTS 200 WATTS al TO-247(3P) Characteristic Symbol 2SA1295 Unit Collector-Emitter Voltage Veo 230 V Collector-Base Voltage Vepo 230 Vv Emitter-Base Voltage Verso 5.0 Collector Current - Continuous le 17 - Peak lom 20 Base current lp 5.0 A Total Power Dissipation @T, = 25C Py 200 w Derate above 25C 1.6 wrc Operating and Storage Junction Ty. Tst C Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rjc 0.625 C EM PrP rect Te 123] fF Fd - FIGURE -1 POWER DERATING 8a 8 oRBABRAA P,, POWER DISSIPATION(WATTS) Oo 25 50 7% 100 125 150 T. , TEMPERATURE( C) PIN 1.BASE 2.COLLECTOR 3.EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 2238 B 15.38 | 16.20 Cc 1.20 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 | 12.84 G 4.20 4.50 H 1.82 2.46 I 2.92 3.23 J 0.89 153 K 5.26 5.66 L 18.50 | 21.50 M 4.68 5.36 N 2,40 2.80 oO 3.25 3.6 P 0.55 0.702SA1295 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBR)cEo V (1,= 25 mA, Ip= 0 ) 230 Collector Cutoff Current leo uA ( Veg= 230 V, I= 0) 100 Emitter Cutoff Current leso uA ( Vep= 5.0 V, I,= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (Ig= 5.0 A, Vog= 4.0 V ) hFE 40 Collector-Emitter Saturation Voltage VoE;sat) Vv ( ig= 5.0 A,l,= 500 mA ) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fy MHz (Ig = 2.0 A, Veg = 12 V, f = 1.0 MHz ) 10 SWITCHING CHARATERISTICS Turn-on Time Vec= S0V, I= 5.0A ton 0.35(typ) us Storage Time ai eee mA t. 1.50(typ) us = 12 ohm Fall Time t, 0.30(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%ACTIVE-REGION SAFE OPERATING AREA (SOA) lg MAX.(PULSED) le o = o SINGLE NONREPETITIVE PULSE Tc=25C CURVES MUST BE DERATER lc, COLLECTOR CURRENT (Amp.) LINEARLY WITH INCREASE IN TEMPERATURE 0.1 3.0 5.0 7.0 10 20 30 50 70 100 230 = 400 Vce , COLLECTOR EMITTER (VOLTS) VCE(sat) - Ip Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) 0 05 1.0 18 1.0 ls, BASE CURRENT (A) fr-le COMMON To#25C Voeet2V fr, TRANSITION FREQUENCY (MHz) N Ss 0.02 0.03 0.05 0.1 02 03 05 1.0 20 30 5.0 10 ic, COLLECTOR CURRENT (A) lc , COLLECTOR CURRENT (A) hre , OC CURRENT GAIN 2SA1295 PNP There are two limitation.on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate I-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typi9g=150 C:T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided TypigS 150C, At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Ic - Vee 0 0.5 1 15 2 25 3 3.5 4 Vce , COLLECTOR-EMITTER VOLTAGE (V) DC CURRENT GAIN C) COMMON EMITTER Te=100C Vog=4V 0.02 0.05 0.1 02 0.5 10 620 5.0 10 17 Ie , COLLECTOR CURRENT (AMP)