LESHAN RADIO COMPANY, LTD.
G6–1/2
1
ANODE
2
ANODE
3
CATHODE 1
3
2
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse V oltage V R50 Vdc
Forward Current I F200 mAdc
Peak Forward Surge Current I FM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board (1) P D225 mW
T A = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE )
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown V oltage
(I (BR) = 5.0 µAdc) V (BR) 50 — Vdc
Reverse V oltage Leakage Current I RµAdc
(V R = 50 Vdc, T J = 125°C) — 100
(V R = 50Vdc) — 0.1
Diode Capacitance C D— 2.0 pF
(V R = 0, f = 1.0 MHz)
Forward V oltage V FVdc
(I F = 100 mAdc) — 1.0
Reverse Recovery T ime t rr — 4.0 ns
(I
F
=I
R
=10mAdc, I
R(REC)
=1.0mAdc, measured at I
R
= 1.0 mA, R
L
=100Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAV74LT1
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
Monolithic Dual Switching Diode
LESHAN RADIO COMPANY, LTD.
G6–2/2
100
10
1.0
0.1 0.2 0.4 0.6 0.8 1.0 1.2
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
01020304050
10
1.0
0.1
0.01
0.001
02 468
1.0
0.9
0.8
0.7
0.6
I F , FORWARD CURRENT (mA)
V F , FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
I R , REVERSE CURRENT (µA)
C T TO TAL CAPACITANCE (pF)
BAV74LT1
Curves Applicable to Each Anode
T
A
= – 40°C
T
A
= 25°C
T
A
= 25°C
