HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999. 08.01
Page No. : 1/3
HSMC Product Specifi cation
H2N6388
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6388 is designed for general-purpose amplifier and
switching applica tions.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperatur e................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 65 W
Total Power Dissipation (Ta=25°C)...................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... 80 V
BVCEO Collector to Emitter Voltage................................................................................... 80 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current............................................................................................................ 10 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=1mA, IE= 0
*BVCEO 80 - - V IC=200mA, IB=0
ICBO - - 100 uA VCB=160V, IE=0
IEBO - - 5 mA VEB=5V, IC=0
ICEO - - 1 mA VCE=80V, IB=0
ICEV - - 300 uA VCE=80V, VBE(off)=1.5V
*VCE(sat)1 - - 2 V IC=5A, IB=10mA
*VCE(sat)2 - - 3 V IC=10A, IB=100mA
*VCE(sat)3 - 1.5 - V IC=5A, IB=2.5mA
*VBE(sat) - 2 - V IC=5A, IB=5mA
VBE(on)1 - - 2.8 V IC=5A, VCE=3V
VBE(on)2 - - 4.5 V IC=10A, VCE=3V
*hFE1 1 - 20 K IC=5A, VCE=3V
*hFE2 100 - - IC=10A, VCE=3V
VFEC - 3 - V IC=5A
Cob - - 200 pF VCB=10V, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of
Rank hFE1 VCE(sat)1 VCE(sat)3 VBE(sat) VFEC
KC 2-20K <1.3V <1.5V <2.0V <3.0V
Normal 1-20K <2.0V - - -
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999. 08.01
Page No. : 2/3
HSMC Product Specifi cation
Characteristics Curve
Current Gain & Col lect or Current
1
10
100
1000
10000
1 10 100 1000 10000
Coll ec tor Cur r e nt (mA )
hFE
hFE @ VCE=3V
Saturation Voltage & Collector Current
100
1000
10000
100 1000 10000
Collector Curren t (mA)
Satu ration Voltage (mV)
VBE(sat) @ IC=100IB
VCE(sat) @ IC=100IB
On Vol tage & Col l ect or Cu rrent
100
1000
10000
10 100 1000 10000
Coll ec tor Cur r e nt (mA )
On Voltage (mV)
VBE(on) @ VCE=3V
Sw itching Time & Collector Current
0.1
1
10
110
Collector Curren t (A)
Switchin g T imes ( us)
Tstg
VCC=30V, IC=250IB1=-250IB2
Tf
Ton
Capacit an ce & R everse-Biased Vol tage
10
100
1000
0.1 1 10 100
R everse - Biased Vol t ag e ( V)
Cap a c tia nce (pF)
Cob
Safe Op e rating A rea
1
10
100
1000
10000
100000
1 10 100
Forward Vol tage-VCE (V)
Collector Curren t-IC (m A)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999. 08.01
Page No. : 3/3
HSMC Product Specifi cation
TO-220AB Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H-
*0.6398 - *16.25
Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimens ion : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin famil y, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Tai wan R.O. C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
A B
E
G
IK
M
O
P
3
2
1
C
N
H
D
4
Style : Pin 1.Base 2.Co llec tor 3. Emitter
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
