
IGBT MODULE Spec.No.IGBT-SP-04023 R2
P1
MBN1800E17DD
Silicon N-channel IGBT
FEATURES
∗ High speed, low loss IGBT module due to LiPT Trench Technology
∗ Low noise due to ultra soft fast recovery diode. (U-SFD)
∗ High reverse recovery capability (HiRC)
∗ High thermal fatigue durability.
(∆Tc=70°C, N>30,000cycles)
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN1800E17DD
Collector Emitter Voltage V
CES
V 1,700
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,800
Collector Current 1ms I
Cp
A 3,600
DC I
F
1,800
Forward Current 1ms I
FM
A 3,600
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature Tstg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
4,000 (AC 1 minute)
Terminals
(M4/M8)
- 2/15 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2 / 15
+0-3
N·m (2) Recommended Value 5.5±0.5N·m
ELECTRIC CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 12 V
CE
=1,700V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA
- 15 50 V
CE
=1,700V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
- 2.2 - I
C
=1,800A, V
GE
=15V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE
(sat)
V - 2.7 3.3 I
C
=1,800A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 5.0 6.5 8.0 V
CE
=10V, I
C
=180mA, Tj=25
o
C
Input Capacitance C
ies
nF - 150
- V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Gate Charge Q
G
µC - 12 - VGE=±15V, Vcc=900V, Ic=1,800A
Internal Gate Resistance
(Tentative) Rge(int)
Ω - 0.9 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
- 0.8 1.6
Turn On Time t
on
- 1.3 2.6
Fall Time t
f
- 0.2 0.4
Switching Times
Turn Off Time t
off
µs
- 1.5 3.0
V
CC
=900V, Ic=1,800A
L=55nH,C
GE
=180nF
(3)
R
G
=1.5Ω
(3)
V
GE
=±15V, Tj=125
o
C
- 1.6 - IF=1,800A, V
GE
=0V, Tj=25
o
C
Peak Forward Voltage Drop V
FM
V - 1.7 2.3 IF=1,800A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs - 0.7 1.4
E
on(10%)
J/P
- 0.65
1.0
Turn On Loss E
on(Full)
J/P
- 0.7 (1.05)
E
off(10%)
J/P
- 0.58
0.9
Turn Off Loss E
off(Full)
J/P
- 0.65
(1.05)
E
rr(10%)
J/P
- 0.68
1.1
Reverse Recovery Loss E
rr(Full)
J/P
- 0.8 (1.2)
Reverse Recovery Peak Current IRRM
A - 1,800
-
V
CC
=900V, Ic=1,800A
L=55nH,C
GE
=180nF
(3)
R
G
=1.5Ω
(3)
V
GE
=±15V, Tj=125
o
C
RBSOA Ic A 3,600
- -
Recovery SOA I
F
A 3,600
- -
V
CC
=1,000V, L=55nH,C
GE
=180nF
(3)
R
G
=1.5Ω
(3)
V
GE
=±15V, Tj=125
o
C
I
2
t value I
2
t kA
2
t
- 1,000
- T
j,start
=125
o
C, 10ms, V
R
=0V
Partial Discharge Extinction Voltage V
PDoff
V
RMS
1.3 - - Q=10pC, 50Hz,
Notes :
(3) R
G
and C
GE
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
and C
GE
value after the measurement of switching waveforms (overshoot voltage,
etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
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