IGBT MODULE Spec.No.IGBT-SP-04023 R2
P1
MBN1800E17DD
Silicon N-channel IGBT
FEATURES
∗ High speed, low loss IGBT module due to LiPT Trench Technology
∗ Low noise due to ultra soft fast recovery diode. (U-SFD)
∗ High reverse recovery capability (HiRC)
∗ High thermal fatigue durability.
(∆Tc=70°C, N>30,000cycles)
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN1800E17DD
Collector Emitter Voltage V
CES
V 1,700
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,800
Collector Current 1ms I
Cp
A 3,600
DC I
F
1,800
Forward Current 1ms I
FM
A 3,600
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature Tstg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
4,000 (AC 1 minute)
Terminals
(M4/M8)
- 2/15 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2 / 15
+0-3
N·m (2) Recommended Value 5.5±0.5N·m
ELECTRIC CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 12 V
CE
=1,700V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA
- 15 50 V
CE
=1,700V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
- 2.2 - I
C
=1,800A, V
GE
=15V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE
(sat)
V - 2.7 3.3 I
C
=1,800A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 5.0 6.5 8.0 V
CE
=10V, I
C
=180mA, Tj=25
o
C
Input Capacitance C
ies
nF - 150
- V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Gate Charge Q
G
µC - 12 - VGE=±15V, Vcc=900V, Ic=1,800A
Internal Gate Resistance
(Tentative) Rge(int)
Ω - 0.9 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
- 0.8 1.6
Turn On Time t
on
- 1.3 2.6
Fall Time t
f
- 0.2 0.4
Switching Times
Turn Off Time t
off
µs
- 1.5 3.0
V
CC
=900V, Ic=1,800A
L=55nH,C
GE
=180nF
(3)
R
G
=1.5Ω
(3)
V
GE
=±15V, Tj=125
o
C
- 1.6 - IF=1,800A, V
GE
=0V, Tj=25
o
C
Peak Forward Voltage Drop V
FM
V - 1.7 2.3 IF=1,800A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs - 0.7 1.4
E
on(10%)
J/P
- 0.65
1.0
Turn On Loss E
on(Full)
J/P
- 0.7 (1.05)
E
off(10%)
J/P
- 0.58
0.9
Turn Off Loss E
off(Full)
J/P
- 0.65
(1.05)
E
rr(10%)
J/P
- 0.68
1.1
Reverse Recovery Loss E
rr(Full)
J/P
- 0.8 (1.2)
Reverse Recovery Peak Current IRRM
A - 1,800
-
V
CC
=900V, Ic=1,800A
L=55nH,C
GE
=180nF
(3)
R
G
=1.5Ω
(3)
V
GE
=±15V, Tj=125
o
C
RBSOA Ic A 3,600
- -
Recovery SOA I
F
A 3,600
- -
V
CC
=1,000V, L=55nH,C
GE
=180nF
(3)
R
G
=1.5Ω
(3)
V
GE
=±15V, Tj=125
o
C
I
2
t value I
2
t kA
2
t
- 1,000
- T
j,start
=125
o
C, 10ms, V
R
=0V
Partial Discharge Extinction Voltage V
PDoff
V
RMS
1.3 - - Q=10pC, 50Hz,
Notes :
(3) R
G
and C
GE
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
and C
GE
value after the measurement of switching waveforms (overshoot voltage,
etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P2
MBN1800E17DD
THERMAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
IGBT Rth(j-c)
- - 0.013
Thermal Resistance FWD Rth(j-c)
K/W
- - 0.015
Junction to case
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.006
-
Case to fin. Thermal grease applied.
Thickness 100µm,
Thermal conductivity of grease: 1W/mK
MODULE MECHNICAL CHARACTERISTICS
Item Unit
Characteristics Conditions
Weight g 1,300
Between terminal
mm 22
Cree page Distance Terminal-Base mm 19.5
Between terminal
mm 35
Clearance Distance Terminal-Base mm 35
LS(CM-EM) 12 Collector-main to Emitter-main
LS(ES-EM) 3.8 Emitter-sense to Emitter-main
Stray inductance in module
LS(CM-CS)
nH
6.4 Collector-main to Collector sense
Terminal Resistance R
Terminal
mΩ 0.09 Collector-main to Emitter-main
Comparative Tracking Index (CTI) 600
Module base plate Material Al-SiC
Baseplate Thickness mm 5
Insulation Material Al N
Terminal Surface treatment Ni plating
Case Material Poly-Phenilene Sulfide
Fire and Smoke Category I2 / F3 NFF 16-102
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P3
MBN1800E17DD
DEFINITION OF TEST CIRCUIT
Fig.2 Definition of stray inductance
Fig.1 Switching test circuit
Fig.3 Definition of switching loss
t4
t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
Eon(10%)=
∫
Ic
･
Vce dt
t4
t3
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
t5
90%
90%
Vge
Vce
Ic
10%
10%
toff
tf
t8
t7
t0
t0
t6
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t6
t5
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Ic
t
0
VL
tL
Vce
t=t
L
Ls=
V
L
dIc
d
ｔ
( )
Vcc
Ls
L
LOAD
Rg
Cge
G/D
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P4
MBN1800E17DD
CHARACTERISTICS CURVE
STATIC CHARACTERISTICS
Collector Current vs.Collector to Emitter Voltage
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
Tc=25
9V
VGE=15V
TYPICAL
13V 11V
Collector Current vs.Collector to Emitter Voltage
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
Tc=125℃
9V
VGE=15V
TYPICAL
13V 11V
TYPICAL
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage VF(V)
Forward Current IF(A)
Tc=25℃
Tc=25℃Tc=25℃
Tc=25℃ Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Forward Voltage of free-wheeling diode
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P5
MBN1800E17DD
DYNAMIC CHARACTERISTICS
DEPENDENCE OF CURRENT
0
0.5
1
0 500 1000 1500 2000
Collector Current Ic (A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=55nH
L=55nH L=55nH
L=55nH
RG=1.5Ω
RG=1.5Ω RG=1.5Ω
RG=1.5Ω
CGE=180nF
CGE=180nF CGE=180nF
CGE=180nF
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Turn-on Loss vs. Collector Current
TYPICAL
Eon(Full)
Eon(10%)
Turn-on Loss Eon (J/pulse)
0
0.5
1
0 500 1000 1500 2000
Collector Current Ic (A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=55nH
L=55nH L=55nH
L=55nH
RG=1.5Ω
RG=1.5Ω RG=1.5Ω
RG=1.5Ω
CGE=180nF
CGE=180nF CGE=180nF
CGE=180nF
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Turn-off Loss vs. Collector Current
TYPICAL
Eoff(Full)
Eoff(10%)
Turn-off Loss Eoff (J/pulse)
0
0.2
0.4
0.6
0.8
1
0 500 1000 1500 2000
Forward Current IF (A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=55nH
L=55nH L=55nH
L=55nH
RG=1.5Ω
RG=1.5Ω RG=1.5Ω
RG=1.5Ω
CGE=180nF
CGE=180nF CGE=180nF
CGE=180nF
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Recovery Loss vs. Forward Current
TYPICAL
Reverse Recovery Loss Err (J/pulse)
Err(full)
Err(10%)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 500 1000 1500 2000
Collector Current I
C
(A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
L=55nH
L=55nH L=55nH
L=55nH
RG=1.5Ω
RG=1.5Ω RG=1.5Ω
RG=1.5Ω
CGE=180nF
CGE=180nF CGE=180nF
CGE=180nF
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Switching Time vs. Collector Current
TYPICAL
Switching Time ton,tr,toff,tf,trr ( us )
toff
ton
trr
tr
tf
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P6
MBN1800E17DD
DEPENDENCE OF RG
0
0.5
1
1.5
2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate Resistance R
G
(
Ω
ΩΩ
Ω
)
Turn-on Loss Eon (J/pulse)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
IC=1800A
IC=1800A IC=1800A
IC=1800A
L=55nH
L=55nH L=55nH
L=55nH
CGE=180nF
CGE=180nF CGE=180nF
CGE=180nF
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Eon(Full)
Turn-on Loss vs. Gate Resistance
TYPICAL
Eon(10%)
0
0.5
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate Resistance R
G
(
Ω
ΩΩ
Ω
)
Turn-off Loss Eoff (J/pulse)
Eoff(Full)
Eoff(10%)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
IC=1800A
IC=1800A IC=1800A
IC=1800A
L=55nH
L=55nH L=55nH
L=55nH
CGE=180nF
CGE=180nF CGE=180nF
CGE=180nF
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Turn-off Loss vs. Gate Resistance
TYPICAL
0
0.5
1
1.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Gate Resistance R
G
(
Ω
ΩΩ
Ω
)
Reverse Recovery Loss Err (J/pulse)
Err(Full
)
Err(10%)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Tc=125℃
Tc=125℃ Tc=125℃
Tc=125℃
Vcc=900V
Vcc=900V Vcc=900V
Vcc=900V
IF=1800A
IF=1800A IF=1800A
IF=1800A
L=55nH
L=55nH L=55nH
L=55nH
CGE=180nF
CGE=180nF CGE=180nF
CGE=180nF
VG=±15V
VG=±15V VG=±15V
VG=±15V
Inductive Load
Inductive Load Inductive Load
Inductive Load
Recovery Loss vs. Gate Resistance
TYPICAL
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P7
MBN1800E17DD
PACKAGE OUTLINE DRAWING
CIRCUIT DIAGRAM
Gate
Emitter auxiliary
Collector sense
Label
Label
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P8
MBN1800E17DD
TRANSIENT THERMAL IMPEDANCE
Transient Thermal Impedance Curve
(Maximum Value)
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time t(s)
IGBT
Diode
Transient thermal impedance : Zth(j-c) [K/W]
Curve approximation model
Following expressions approximates the transient thermal impedance curves.
Please note that the expressions are the curve fitted value, and there is no physical meaning in this
expression. The expressions are applicable under following condition only.
Condition 1: Time is more than t (1)/e
Condition 2: No heat sink model is considered.
Zth(j-c) =ΣＺth[n]*(1-exp（-t/τth[n]) ) (1)
n 1 2 3 4 5 6 7 Unit
τth[n] 0.10 0.01 0.003 0.001 0.0003 0.0001 0.00003 sec
Zth[n,IGBT] 7.958E-03 2.906E-03 1.177E-03 7.921E-04 9.798E-06 1.406E-05 4.434E-06 K/W
Zth[n,Diode] 9.852E-03 2.171E-03 2.178E-03 7.765E-04 1.000E-07 4.289E-07 1.279E-05 K/W
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P9
MBN1800E17DD
QG-VGE Curve
QG-VGE curve
-15
-10
-5
0
5
10
15
20
-10 -5 0 5 10
QG (uC)
VGE (V)
Vcc=900V
IC=1800A
Tc=25
℃
TYPICAL
Negative environmental impact material
Please note the following materials are contained in the product,
in order to keep characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
Arsenic and its compounds Si chip
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IGBT MODULE Spec.No.IGBT-SP-04023 R2
P10
MBN1800E17DD
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address
http://www.hitachi.co.jp/products/power/pse/
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales
department for the latest version of this
data sheets.
2.
Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.
In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-
related medical
equipment, fuel
control equipment and various kinds of safety equipment), safety should
be ensured by
using semiconductor devices that feature assured safety or by means of
users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheet
s. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in
a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may n
ot be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application
will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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