IGBT MODULE Spec.No.IGBT-SP-04023 R2 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES High speed, low loss IGBT module due to LiPT Trench Technology Low noise due to ultra soft fast recovery diode. (U-SFD) High reverse recovery capability (HiRC) High thermal fatigue durability. (Tc=70C, N>30,000cycles) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) +0 Notes: (1) Recommended Value 1.80.2 / 15 -3N*m Unit MBN1800E17DD V V 1,700 20 1,800 A 3,600 1,800 A 3,600 o C -40 ~ +125 o C -40 ~ +125 VRMS 4,000 (AC 1 minute) 2/15 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRIC CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions o 12 VCE=1,700V, VGE=0V, Tj=25 C Collector Emitter Cut-Off Current I CES mA o 15 50 VCE=1,700V, VGE=0V, Tj=125 C o Gate Emitter Leakage Current IGES nA -500 +500 VGE=20V, VCE=0V, Tj=25 C o 2.2 IC=1,800A, VGE=15V, Tj=25 C Collector Emitter Saturation Voltage VCE(sat) V o 2.7 3.3 IC=1,800A, VGE=15V, Tj=125 C o Gate Emitter Threshold Voltage VGE(TO) V 5.0 6.5 8.0 VCE=10V, IC=180mA, Tj=25 C o Input Capacitance Cies nF 150 VCE=10V, VGE=0V, f=100kHz, Tj=25 C Gate Charge QG 12 C VGE=15V, Vcc=900V, Ic=1,800A o 0.9 VCE=10V, VGE=0V, f=100kHz, Tj=25 C Internal Gate Resistance (Tentative) Rge(int) Rise Time tr 0.8 1.6 VCC=900V, Ic=1,800A (3) Turn On Time ton 1.3 2.6 L=55nH,CGE=180nF Switching Times s (3) Fall Time tf 0.2 0.4 RG=1.5 o Turn Off Time toff 1.5 3.0 VGE=15V, Tj=125 C o 1.6 IF=1,800A, VGE=0V, Tj=25 C Peak Forward Voltage Drop VFM V o 1.7 2.3 IF=1,800A, VGE=0V, Tj=125 C Reverse Recovery Time trr 0.7 1.4 s Eon(10%) J/P 0.65 1.0 Turn On Loss Eon(Full) J/P 0.7 (1.05) VCC=900V, Ic=1,800A (3) Eoff(10%) J/P 0.58 0.9 L=55nH,CGE=180nF Turn Off Loss (3) Eoff(Full) J/P 0.65 (1.05) RG=1.5 o Err(10%) J/P 0.68 1.1 VGE=15V, Tj=125 C Reverse Recovery Loss Err(Full) J/P 0.8 (1.2) Reverse Recovery Peak Current IRRM A 1,800 (3) VCC=1,000V, L=55nH,CGE=180nF RBSOA Ic A 3,600 (3) o RG=1.5 VGE=15V, Tj=125 C Recovery SOA IF A 3,600 2 2 2 o I t value It kA t 1,000 Tj,start=125 C, 10ms, VR=0V Partial Discharge Extinction Voltage VPDoff VRMS 1.3 Q=10pC, 50Hz, Notes : (3) RG and CGE value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG and CGE value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ IGBT MODULE Spec.No.IGBT-SP-04023 R2 MBN1800E17DD THERMAL CHARACTERISTICS Item Thermal Resistance Symbol IGBT FWD Contact Thermal Impedance Unit Min. Typ. Rth(j-c) Rth(j-c) K/W - - Rth(c-f) K/W - Max. Test Conditions 0.013 Junction to case 0.015 Case to fin. Thermal grease applied. 0.006 Thickness 100m, Thermal conductivity of grease: 1W/mK MODULE MECHNICAL CHARACTERISTICS Item Weight Cree page Distance Clearance Distance Stray inductance in module Terminal Resistance Comparative Tracking Index Module base plate Material Baseplate Thickness Insulation Material Terminal Surface treatment Case Material Fire and Smoke Category Between terminal Terminal-Base Between terminal Terminal-Base LS(CM-EM) LS(ES-EM) LS(CM-CS) RTerminal (CTI) Unit Characteristics g mm mm mm mm 1,300 22 19.5 35 35 12 3.8 6.4 0.09 600 Al-SiC 5 Al N Ni plating Poly-Phenilene Sulfide I2 / F3 nH m mm http://store.iiic.cc/ Conditions Collector-main to Emitter-main Emitter-sense to Emitter-main Collector-main to Collector sense Collector-main to Emitter-main NFF 16-102 P2 IGBT MODULE Spec.No.IGBT-SP-04023 R2 MBN1800E17DD DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Cge Fig.1 Switching test circuit Ic Vce Ls= VL t 0 VL dIc d t=tL ( ) tL Fig.2 Definition of stray inductance Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 t Vge 10% t1 10% 10% 10% t tr ton t3 t4 t2 0 0 10% 90% t5 t7 t8 trr IF -Ic t6 t9 t8 IcVce dt Eoff(10%)= IcVce dt Err(10%)= Eoff(Full)= IcVce dt t5 Fig.3 Definition of switching loss http://store.iiic.cc/ t12 t10 IFVce dt t11 t6 IcVce dt t11 t12 t7 t2 t1 t tf toff t3 Eon(Full)= t t Vge t4 Eon(10%)= 0.5Irm 0.1IF 0 t10 Err(Full)= IFVce dt t9 P3 IGBT MODULE Spec.No.IGBT-SP-04023 R2 P4 MBN1800E17DD CHARACTERISTICS CURVE STATIC CHARACTERISTICS TYPICAL TYPICAL VGE=15V 13V 11V 2000 VGE=15V 13V 2000 Tc=125 1800 1800 1600 1600 1400 1400 Collector Current IC (A) Collector Current IC (A) Tc=25 1200 1000 9V 800 1200 9V 1000 800 600 600 400 400 200 200 0 0 0 1 2 3 4 5 Collector-Emitter Voltage VCE (V) Tc=25 Tc=125 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0.0 0.5 1.0 1.5 Forward Voltage 2.0 1 2 3 4 Collector Current vs.Collector to Emitter Voltage TYPICAL 2200 0 Collector-Emitter Voltage VCE (V) Collector Current vs.Collector to Emitter Voltage Forward Current IF(A) 11V 2.5 3.0 VF(V) Forward Voltage of free-wheeling diode http://store.iiic.cc/ 5 IGBT MODULE Spec.No.IGBT-SP-04023 R2 MBN1800E17DD DYNAMIC CHARACTERISTICS DEPENDENCE OF CURRENT TYPICAL TYPICAL 1 1 Conditions Conditions Conditions Conditions Tc=125 Tc=125 Vcc=900V Vcc=900V L=55nH L=55nH RG=1.5 RG=1.5 CGE=180nF CGE=180nF VG=15V VG=15V Eon(Full) Inductive Load Eoff(Full) Eon(10%) 0.5 Turn-off Loss Eoff (J/pulse) Turn-on Loss Eon (J/pulse) Inductive Load Eoff(10%) 0.5 0 0 0 500 1000 Collector Current 1500 0 2000 2000 TYPICAL TYPICAL 3.0 Conditions Conditions Conditions Conditions Tc=125 Tc=125 Vcc=900V Vcc=900V L=55nH L=55nH RG=1.5 RG=1.5 Err(full) CGE=180nF 2.5 CGE=180nF VG=15V VG=15V Inductive Load Inductive Load Err(10%) 0.6 0.4 Switching Time ton,tr,toff,tf,trr ( us ) Err (J/pulse) 1500 Ic (A) Turn-off Loss vs. Collector Current 1 Reverse Recovery Loss 1000 Collector Current Turn-on Loss vs. Collector Current 0.8 500 Ic (A) 2.0 toff 1.5 ton 1.0 tr trr 0.2 0.5 tf 0.0 0 0 500 1000 Forward Current 1500 2000 0 500 1000 Collector Current IF (A) Recovery Loss vs. Forward Current http://store.iiic.cc/ 1500 IC (A) Switching Time vs. Collector Current 2000 P5 IGBT MODULE Spec.No.IGBT-SP-04023 R2 MBN1800E17DD DEPENDENCE OF RG TYPICAL TYPICAL 2 1 Conditions Conditions Conditions Conditions Tc=125 Tc = 12 5 Eon(Full) Vcc=900V Vcc = 90 0 V IC=1800A IC=1 8 00 A L=55nH L=5 5 nH CGE=180nF CGE= 1 80 n F VG=15V VG= 1 5V Inductive Load Induc ti ve Load Eoff(Full) Eon (J/pulse) Eoff (J/pulse) 1.5 1 Eoff(10%) Turn-on Loss Turn-off Loss 0.5 Eon(10%) 0.5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 3.5 TYPICAL 1.5 Conditions Conditions Tc=125 Vcc=900V IF=1800A L=55nH CGE=180nF VG=15V Reverse Recovery Loss Err (J/pulse) Inductive Load 1 Err(Full ) Err(10%) 0.5 0 0.5 1.0 1.5 2.0 Gate Resistance ) 2.5 1.0 1.5 2.0 2.5 3.0 RG ( ) Turn-off Loss vs. Gate Resistance Turn-on Loss vs. Gate Resistance 0.0 0.5 Gate Resistance Gate Resistance RG ( ) 3.0 3.5 RG ( Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 3.5 P6 IGBT MODULE Spec.No.IGBT-SP-04023 R2 MBN1800E17DD PACKAGE OUTLINE DRAWING Label Label Gate Collector sense Emitter auxiliary CIRCUIT DIAGRAM http://store.iiic.cc/ P7 IGBT MODULE Spec.No.IGBT-SP-04023 R2 P8 MBN1800E17DD TRANSIENT THERMAL IMPEDANCE Transient thermal impedance : Zth(j-c) [K/W] 0.1 Diode IGBT 0.01 0.001 0.001 0.01 0.1 1 10 Time t(s) Transient Thermal Impedance Curve (Maximum Value) Curve approximation model Following expressions approximates the transient thermal impedance curves. Please note that the expressions are the curve fitted value, and there is no physical meaning in this expression. The expressions are applicable under following condition only. Condition 1: Time is more than t (1)/e Condition 2: No heat sink model is considered. Zth(j-c) =th[n]*(1-exp-t/th[n]) ) (1) n 1 th[n] 0.10 Zth[n,IGBT] 7.958E-03 Zth[n,Diode] 9.852E-03 2 0.01 2.906E-03 2.171E-03 3 0.003 1.177E-03 2.178E-03 4 0.001 7.921E-04 7.765E-04 http://store.iiic.cc/ 5 0.0003 9.798E-06 1.000E-07 6 0.0001 1.406E-05 4.289E-07 7 0.00003 4.434E-06 1.279E-05 Unit sec K/W K/W IGBT MODULE Spec.No.IGBT-SP-04023 R2 MBN1800E17DD QG-VGE Curve TYPICAL 20 Vcc=900V IC=1800A Tc=25 15 VGE (V) 10 5 0 -5 -10 -15 -10 -5 0 QG (uC) 5 10 QG-VGE curve Negative environmental impact material Please note the following materials are contained in the product, in order to keep characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ P9 IGBT MODULE Spec.No.IGBT-SP-04023 R2 P10 MBN1800E17DD HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 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